BAW56S

BAV756S; BAW56 series High-speed switching diodes Rev. 6 — 18 March 2015 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA BAV756S SOT363 SC-88 BAW56 BAW56M SOT23 SOT883 SC-101 BAW56S SOT363 SC-88 BAW56T BAW56W SOT416 SOT323 SC-75 SC-70 JEDEC - Package configuration very small TO-236AB small - leadless ultra small - very small - ultra small - very small Configuration quadruple common anode/common cathode dual common anode dual common anode quadruple common anode/common anode dual common anode dual common anode 1.2 Features and benefits  High switching speed: trr  4 ns  Low leakage current  Small SMD plastic packages  Low capacitance: Cd  2 pF  Reverse voltage: VR  90 V  AEC-Q101 qualified 1.3 Applications  High-speed switching  General-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions Min Typ VR = 80 V [1] - - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 0.5 90 4 Unit A V ns NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 2. Pinning information Table 3. Pinning Pin Description BAV756S 1 anode (diode 1) 2 cathode (diode 2) 3 common anode (diode 2 and diode 3) 4 cathode (diode 3)...