SBAS16H

BAS16H, SBAS16H Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage Peak Forward Current Non−Repetitive Peak Forward Surge Current, 60 Hz VR IF IFSM(surge) 100 200 500 Vdc mAdc mAdc Repetitive Peak Forward Current (Note 2) IFRM 1.0 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s IFSM 36.0 18.0 6.0 3.0 0.7 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C Thermal Resistance Junction to Ambient Junction and Storage Temperature RqJA TJ, Tstg 635 −55 to 150 °C/W °C 1. FR-4 Minimum Pad. 2. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25°C prior to surge. http://onsemi.com 1 CATHODE 2 ANODE 2 1 SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM A6 M A6 = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† BAS...