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STTH16L06CT Dataheets PDF



Part Number STTH16L06CT
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Datasheet STTH16L06CT DatasheetSTTH16L06CT Datasheet (PDF)

STTH16L06C Turbo 2 ultrafast high voltage rectifier Features ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching and conduction losses ■ Low thermal resistance Description The STTH16L06, which is using ST Turbo 2 600 V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. A1 K A2 A2 A1 K TO-220AB STTH16L06CT K A2 K A1 TO-220FPAB STTH16L06CFP A2 A1 D2PAK STTH16L06CG Tabl.

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STTH16L06C Turbo 2 ultrafast high voltage rectifier Features ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching and conduction losses ■ Low thermal resistance Description The STTH16L06, which is using ST Turbo 2 600 V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. A1 K A2 A2 A1 K TO-220AB STTH16L06CT K A2 K A1 TO-220FPAB STTH16L06CFP A2 A1 D2PAK STTH16L06CG Table 1. Device summary IF(AV) Up to 2 x 10 A VRRM 600 V Tj 175 °C VF (typ) 1.05 V trr (max) 35 ns April 2011 Doc ID 10760 Rev 2 1/10 www.st.com 10 Characteristics 1 Characteristics STTH16L06C Table 2. Absolute ratings (limiting values) Symbol Parameter VRRM IF(RMS) IF(AV) IFSM Tstg Tj Repetitive peak reverse voltage Forward rms current TO-220AB / Average forward current D2PAK δ = 0.5 Tc = 140 °C Tc = 135 °C Tc = 130 °C Tc = 120 °C Per diode Per device Per diode Per device TO-220FPAB Tc = 110 °C Per diode Tc = 80 °C Per device Surge non repetitive forward current tp = 10 ms sinusoidal Storage temperature range Maximum operating junction temperature Value 600 30 8 16 10 20 8 16 120 -65 to + 175 175 Unit V A A A °C °C Table 3. Thermal resistance Symbol Rth(j-c) Junction to case Rth(c) Coupling Parameter TO-220AB / D2PAK TO-220FPAB TO-220AB / D2PAK TO-220FPAB TO-220AB / D2PAK TO-220FPAB Maximum Unit Per diode Per diode Total Total 2.5 5 1.6 3.8 0.7 2.5 °C/ W °C/ W When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4. Static electrical characteristics Symbo l Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % Tj = 25 °C Tj= 150 °C VR = VRRM Tj = 25 °C Tj = 150 °C IF = 8 A Tj = 25 °C Tj = 150 °C IF = 16 A Min. Typ 25 1.05 1.28 Max. Unit 8 µA 240 1.8 1.35 V 2.08 1.64 To evaluate the maximum conduction losses use the following equation: P = 1.06 x IF(AV) + 0.036 IF2(RMS) 2/10 Doc ID 10760 Rev 2 STTH16L06C Characteristics Table 5. Symbol Dynamic electrical characteristics Parameter Test conditions Min. Typ Max. Unit trr Reverse recovery time Tj = 25 °C IF = 0.5 A, Irr = 0.25 A, IR = 1 A IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V IRM Reverse recovery current Tj = 125 °C IF = 8 A, dIF/dt = 100 A/µs, VR = 400 V tfr VFP Forward recovery time Forward recovery voltage Tj = 25 °C IF = 8 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 35 40 55 ns 4.5 6.5 200 3.5 A ns V Figure 1. P(W) 15 10 5 0 0 Conduction losses versus average Figure 2. Forward voltage drop versus current forward current δ = 0.1 δ = 0.2 δ = 0.05 δ = 0.5 δ=1 T IF(AV)(A) δ=tp/T tp 2 4 6 8 10 IFM(A) 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 Tj=150°C (maximum values) Tj=150°C (typical values) Tj=25°C (maximum values) VFM(V) 1.0 1.5 2.0 2.5 3.0 3.5 Figure 3. Relative variation of thermal Figure 4. impedance junction to case versus pulse duration (TO-220AB, D2PAK) Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse 0.0 1.E-03 1.E-02 tp(s) 1.E-01 1.E+00 Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 1.E+00 1.E+01 Doc ID 10760 Rev 2 3/10 Characteristics STTH16L06C Figure 5. Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) 18 VR=400V Tj=125°C 16 14 12 10 8 6 4 2 0 0 50 IF=IF(AV) IF=0.5 x IF(AV) IF=2 x IF(AV) dIF/dt(A/µs) 100 150 200 250 300 350 400 450 500 Figure 6. Reverse recovery time versus dIF/dt (typical values, per diode) trr(ns) 400 350 VR=400V Tj=125°C 300 250 IF=2 x IF(AV) 200 150 IF=IF(AV) IF=0.5 x IF(AV) 100 50 0 0 dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 Figure 7. Reverse recovery charges versus dIF/dt (typical values, per diode) Qrr(nC) 800 750 700 VR=400V Tj=125°C 650 600 550 IF=2 x IF(AV) 500 450 400 350 IF=IF(AV) IF=0.5 x IF(AV) 300 250 200 150 100 50 dIF/dt(A/µs) 0 0 100 200 300 400 500 Figure 8. Reverse recovery softness factor versus dIF/dt (typical values, per diode) S factor 1.6 1.4 1.2 IF< 2 x IF(AV) VR=400V Tj=125°C 1.0 0.8 0.6 0.4 0.2 0.0 0 dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 Figure 9. 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 Relative variations of dynamic parameters versus junction temperature Figure 10. Transient peak forward voltage versus dIF/dt (typical values, per diode) S factor trr IRM QRR Tj(°C) 50 75 IF=IF(AV) VR=400V Reference: Tj=125°C 100 125 VFP(V) 16 15 IF=IF(AV) 14 Tj=125°C 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 50 dIF/dt(A/µs) 100 150 200 250 300 350 400 450 500 4/10 Doc ID 10760 Rev 2 STTH16L06C Characteristics Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance .


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