Document
STTH16L06C
Turbo 2 ultrafast high voltage rectifier
Features
■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching and conduction losses ■ Low thermal resistance
Description
The STTH16L06, which is using ST Turbo 2 600 V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode.
A1 K
A2
A2 A1 K TO-220AB STTH16L06CT
K
A2 K A1
TO-220FPAB STTH16L06CFP
A2
A1
D2PAK STTH16L06CG
Table 1. Device summary
IF(AV)
Up to 2 x 10 A
VRRM
600 V
Tj 175 °C
VF (typ)
1.05 V
trr (max)
35 ns
April 2011
Doc ID 10760 Rev 2
1/10
www.st.com
10
Characteristics
1 Characteristics
STTH16L06C
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
VRRM IF(RMS)
IF(AV)
IFSM Tstg Tj
Repetitive peak reverse voltage
Forward rms current
TO-220AB / Average forward current D2PAK
δ = 0.5
Tc = 140 °C Tc = 135 °C Tc = 130 °C Tc = 120 °C
Per diode Per device Per diode Per device
TO-220FPAB Tc = 110 °C Per diode Tc = 80 °C Per device
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
600 30 8 16 10 20 8 16 120 -65 to + 175 175
Unit V A
A
A °C °C
Table 3. Thermal resistance Symbol
Rth(j-c) Junction to case
Rth(c) Coupling
Parameter TO-220AB / D2PAK TO-220FPAB TO-220AB / D2PAK TO-220FPAB TO-220AB / D2PAK TO-220FPAB
Maximum Unit
Per diode Per diode Total Total
2.5 5 1.6 3.8 0.7 2.5
°C/ W
°C/ W
When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 4. Static electrical characteristics
Symbo l
Parameter
Test conditions
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 %
Tj = 25 °C Tj= 150 °C
VR = VRRM
Tj = 25 °C Tj = 150 °C
IF = 8 A
Tj = 25 °C Tj = 150 °C
IF = 16 A
Min.
Typ 25 1.05 1.28
Max. Unit
8 µA
240 1.8 1.35
V 2.08 1.64
To evaluate the maximum conduction losses use the following equation: P = 1.06 x IF(AV) + 0.036 IF2(RMS)
2/10 Doc ID 10760 Rev 2
STTH16L06C
Characteristics
Table 5. Symbol
Dynamic electrical characteristics
Parameter
Test conditions
Min. Typ Max. Unit
trr Reverse recovery time
Tj = 25 °C
IF = 0.5 A, Irr = 0.25 A, IR = 1 A
IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V
IRM
Reverse recovery current
Tj = 125 °C
IF = 8 A, dIF/dt = 100 A/µs, VR = 400 V
tfr VFP
Forward recovery time Forward recovery voltage
Tj = 25 °C
IF = 8 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax
35 40 55
ns
4.5 6.5
200 3.5
A
ns V
Figure 1.
P(W)
15
10
5
0 0
Conduction losses versus average Figure 2. Forward voltage drop versus
current
forward current
δ = 0.1 δ = 0.2 δ = 0.05
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
2 4 6 8 10
IFM(A)
100
90
80
70
60
50
40
30
20
10
0 0.0
0.5
Tj=150°C (maximum values)
Tj=150°C (typical values)
Tj=25°C (maximum values)
VFM(V)
1.0 1.5 2.0 2.5 3.0 3.5
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus pulse duration (TO-220AB, D2PAK)
Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse 0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 Single pulse
0.1
0.0 1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
Doc ID 10760 Rev 2
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Characteristics
STTH16L06C
Figure 5.
Peak reverse recovery current
versus dIF/dt (typical values, per diode)
IRM(A)
18 VR=400V Tj=125°C
16
14
12
10
8
6
4
2
0 0 50
IF=IF(AV) IF=0.5 x IF(AV)
IF=2 x IF(AV)
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery time versus dIF/dt (typical values, per diode)
trr(ns)
400
350
VR=400V Tj=125°C
300 250
IF=2 x IF(AV)
200 150
IF=IF(AV)
IF=0.5 x IF(AV)
100
50
0 0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery charges versus dIF/dt (typical values, per diode)
Qrr(nC)
800
750 700
VR=400V Tj=125°C
650
600
550
IF=2 x IF(AV)
500 450 400 350
IF=IF(AV) IF=0.5 x IF(AV)
300 250 200 150
100
50 dIF/dt(A/µs)
0
0 100 200 300 400 500
Figure 8.
Reverse recovery softness factor
versus dIF/dt (typical values, per diode)
S factor
1.6
1.4
1.2
IF< 2 x IF(AV) VR=400V Tj=125°C
1.0
0.8
0.6
0.4
0.2
0.0 0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 9.
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
25
Relative variations of dynamic parameters versus junction temperature
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values, per diode)
S factor
trr IRM
QRR
Tj(°C)
50 75
IF=IF(AV) VR=400V Reference: Tj=125°C
100 125
VFP(V)
16 15 IF=IF(AV) 14 Tj=125°C 13 12 11 10
9 8 7 6 5 4 3 2 1 0
0 50
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
4/10 Doc ID 10760 Rev 2
STTH16L06C
Characteristics
Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance .