PL2302GD

PULAN TECHNOLSOeGmY CiOc.,oLnIMdITuEcDtor CO.,LTD P L2302GD PULAN 18948314942 QQ:1094642907 N-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 3.0 65 @ VGS = 4.5V 20V 2.0 90 @ VGS = 2.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. SOT-23-3 D D S G G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b a Drain-Source Diode Forward Current Maximum Power Dissipation a TA=25°C TA=75°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ±12 3 9 1 1.25 0.75 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS a Thermal Resistance,Junction-to-Ambient Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. RthJA 1 100 °C/W PULAN TECHNOLOGY CO., LIMITED PL2302GD ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Parameter Symbol Condition Min Typc Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V , ID = 250uA 20 V Zero Gate Voltage Drain Current IDSS VDS = 20V , VGS = 0V 1 uA Gate-Body Leakage b ON CHARACTERISTICS IGSS VGS = ±8V , VDS = 0V ±10 uA Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250uA 0.5 0.7 1 V Drain-Source On-State Resistance RDS(on) VGS = 4.5V , ID = 2.8A VGS = 2.5V , ID = 2.0A 50 65 ...