FSS9130R

June 1998 FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features 6A, -100V, rDS(ON) = 0.660Ω Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM Photo Current - 1.5nA Per-RAD(Si)/s Typically Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSS9130D1 10K TXV FSS9130D3 100K Commercial FSS9130R1 100K TXV FSS9130R3 100K Space FSS9130R4 Formerly available as type TA17736. Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specific...