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MMSZ4683-V Dataheets PDF



Part Number MMSZ4683-V
Manufacturers Vishay
Logo Vishay
Description Small Signal Zener Diodes
Datasheet MMSZ4683-V DatasheetMMSZ4683-V Datasheet (PDF)

MMSZ4681-V to MMSZ4717-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Zener Diodes. • Standard Zener voltage tolerance is ± 5 %. e3 • High temperature soldering guaranteed: 260 °C / 4X10 seconds set terminals. • These diodes are also available in DO35 case with the type designation 1N4681...1N4717 and SOT23 case with the type designation MMBZ4681-V... MMBZ4717-V. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mech.

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MMSZ4681-V to MMSZ4717-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Zener Diodes. • Standard Zener voltage tolerance is ± 5 %. e3 • High temperature soldering guaranteed: 260 °C / 4X10 seconds set terminals. • These diodes are also available in DO35 case with the type designation 1N4681...1N4717 and SOT23 case with the type designation MMBZ4681-V... MMBZ4717-V. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: SOD123 Plastic case Weight: approx. 9.3 mg Packaging codes/options: GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Zener current (see Table "Characteristics") Power dissipation TL = 75 °C Ptot 1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Thermal resistance junction to ambient air Maximum junction temperature Storage temperature range RthJA Tj Tstg 1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout. 17431 Value 5001) Unit mW Value 3401) 150 - 55 to + 150 Unit K/W °C °C Document Number 85773 Rev. 1.6, 04-Apr-06 www.vishay.com 1 MMSZ4681-V to MMSZ4717-V Vishay Semiconductors Electrical Characteristics TJ = 25 ° unless otherwise noted Maximum VF = 0.9 V at IF = 10 mA Partnumber Marking Code MMSZ4681-V CF MMSZ4682-V CH MMSZ4683-V CJ MMSZ4684-V CK MMSZ4685-V CM MMSZ4686-V CN MMSZ4687-V CP MMSZ4688-V CT MMSZ4689-V CU MMSZ4690-V CV MMSZ4691-V CA MMSZ4692-V CX MMSZ4693-V CY MMSZ4694-V CZ MMSZ4695-V DC MMSZ4696-V DD MMSZ4697-V DE MMSZ4698-V DF MMSZ4699-V DH MMSZ4700-V DJ MMSZ4701-V DK MMSZ4702-V DM MMSZ4703-V DN MMSZ4704-V DP MMSZ4705-V DT MMSZ4706-V DU MMSZ4707-V DV MMSZ4708-V DA MMSZ4709-V DZ MMSZ4710-V DY MMSZ4711-V EA MMSZ4712-V EC MMSZ4713-V ED MMSZ4714-V EE MMSZ4715-V EF MMSZ4716-V EH MMSZ4717-V EJ 1) Measured with device junction in thermal equilibrium typ 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 Zener Voltage1) VZ at IZT = 50 µA V min 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.27 8.65 9.5 10.5 11.4 12.4 13.3 14.3 15.2 16.2 17.1 18.1 19 20.9 22.8 23.8 25.7 26.6 28.5 31.4 34.2 37.1 40.9 max 2.52 2.84 3.15 3.47 3.78 4.1 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.14 9.56 10.5 11.6 12.6 13.7 14.7 15.8 16.8 17.9 18.9 20 21 23.1 25.2 26.3 28.4 29.4 31.5 34.7 37.8 41 45.2 Max. Reverse Current IR µA Test Voltage VR V 21 11 0.8 1 7.5 1.5 7.5 2 52 42 10 3 10 3 10 4 10 5 10 5.1 10 5.7 1 6.2 1 6.6 1 6.9 1 7.6 0.05 8.4 0.05 9.1 0.05 9.8 0.05 10.6 0.05 11.4 0.05 12.1 0.05 12.9 0.05 13.6 0.05 14.4 0.01 15.2 0.01 16.7 0.01 18.2 0.01 19 0.01 20.4 0.01 21.2 0.01 22.8 0.01 25 0.01 27.3 0.01 29.6 0.01 32.6 www.vishay.com 2 Document Number 85773 Rev. 1.6, 04-Apr-06 MMSZ4681-V to MMSZ4717-V Vishay Semiconductors Typical Characteristics Tamb = 25 °C unless otherwise specified Ptot - Total Power Dissipation (mW) 600 500 400 300 200 100 0 0 95 9602 40 80 120 160 200 Tamb - Ambient Temperature (°C) Figure 1. Total Power Dissipation vs. Ambient Temperature TKVZ - Temperature Coefficient of VZ (10-4/K) 15 10 5 I = 5 mA Z 0 -5 0 95 9600 10 20 30 40 VZ - Z-Voltage (V) 50 Figure 4. Temperature Coefficient of Vz vs. Z-Voltage VZ - Voltage Change (mV) 1000 Tj = 25 °C 100 IZ = 5 mA 10 1 0 5 10 15 20 25 95 9598 VZ - Z-Voltage (V) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C VZtn - Relative Voltage Change 1.3 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 1.0 0 - 2 x 10-4/K 0.9 - 4 x 10-4/K 0.8 - 60 0 60 120 180 240 95 9599 Tj - Junction Temperature (°C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature IF - Forward Current (mA) CD - Diode Capacitance (pF) 200 150 VR = 2 V 100 Tj = 25 °C 50 0 0 95 9601 5 10 15 20 VZ - Z-Voltage (V) 25 Figure 5. Diode Capacitance vs. Z-Voltage 100 10 Tj = 25 °C 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 95 9605 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage Document Number 85773 Rev. 1.6, 04-Apr-06 www.vishay.com 3 MMSZ4681-V to MMSZ4717-V Vishay Semiconductors IZ - Z-Current (mA) IZ - Z-Current (mA) 100 80 Ptot = 500 mW Tamb = 25 °C 60 40 20 0 0 95 9604 4 6 8 12 VZ - Z-Voltage (V) 20 Figure 7. Z-Current vs. Z-Voltage rZ - Differential Z-Resistance (Ω) 1000 IZ = 1 mA 100 5 mA 10 10 mA 1 Tj = 25 °C 0 5 10 15 20 25 95 9606 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage 50 40 Ptot = 500 mW Tamb = 25 °C 30 20 10 0 15 95 9607 20 25 30 VZ - Z-Voltage (V) 35 Figure 8. Z-Current vs. Z-Vo.


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