Document
MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Zener Diodes.
• Standard Zener voltage tolerance is ± 5 %.
e3
• High temperature soldering guaranteed: 260 °C / 4X10 seconds set terminals.
• These diodes are also available in DO35 case with the type designation 1N4681...1N4717 and SOT23 case with the type designation MMBZ4681-V... MMBZ4717-V.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Mechanical Data
Case: SOD123 Plastic case Weight: approx. 9.3 mg Packaging codes/options: GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter
Test condition
Symbol
Zener current (see Table "Characteristics")
Power dissipation
TL = 75 °C
Ptot
1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified Parameter
Test condition
Symbol
Thermal resistance junction to ambient air Maximum junction temperature Storage temperature range
RthJA Tj Tstg
1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout.
17431
Value 5001)
Unit mW
Value 3401) 150 - 55 to + 150
Unit K/W °C °C
Document Number 85773 Rev. 1.6, 04-Apr-06
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MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
Electrical Characteristics
TJ = 25 ° unless otherwise noted Maximum VF = 0.9 V at IF = 10 mA
Partnumber
Marking Code
MMSZ4681-V
CF
MMSZ4682-V
CH
MMSZ4683-V
CJ
MMSZ4684-V
CK
MMSZ4685-V
CM
MMSZ4686-V
CN
MMSZ4687-V
CP
MMSZ4688-V
CT
MMSZ4689-V
CU
MMSZ4690-V
CV
MMSZ4691-V
CA
MMSZ4692-V
CX
MMSZ4693-V
CY
MMSZ4694-V
CZ
MMSZ4695-V
DC
MMSZ4696-V
DD
MMSZ4697-V
DE
MMSZ4698-V
DF
MMSZ4699-V
DH
MMSZ4700-V
DJ
MMSZ4701-V
DK
MMSZ4702-V
DM
MMSZ4703-V
DN
MMSZ4704-V
DP
MMSZ4705-V
DT
MMSZ4706-V
DU
MMSZ4707-V
DV
MMSZ4708-V
DA
MMSZ4709-V
DZ
MMSZ4710-V
DY
MMSZ4711-V
EA
MMSZ4712-V
EC
MMSZ4713-V
ED
MMSZ4714-V
EE
MMSZ4715-V
EF
MMSZ4716-V
EH
MMSZ4717-V
EJ
1) Measured with device junction in thermal equilibrium
typ 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43
Zener Voltage1)
VZ at IZT = 50 µA V min
2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.27 8.65 9.5 10.5 11.4 12.4 13.3 14.3 15.2 16.2 17.1 18.1 19 20.9 22.8 23.8 25.7 26.6 28.5 31.4 34.2 37.1 40.9
max 2.52 2.84 3.15 3.47 3.78 4.1 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.14 9.56 10.5 11.6 12.6 13.7 14.7 15.8 16.8 17.9 18.9 20 21 23.1 25.2 26.3 28.4 29.4 31.5 34.7 37.8 41 45.2
Max. Reverse Current IR µA
Test Voltage
VR V
21 11 0.8 1 7.5 1.5 7.5 2 52 42 10 3 10 3 10 4 10 5 10 5.1 10 5.7 1 6.2 1 6.6 1 6.9 1 7.6 0.05 8.4 0.05 9.1 0.05 9.8 0.05 10.6 0.05 11.4 0.05 12.1 0.05 12.9 0.05 13.6 0.05 14.4 0.01 15.2 0.01 16.7 0.01 18.2 0.01 19 0.01 20.4 0.01 21.2 0.01 22.8 0.01 25 0.01 27.3 0.01 29.6 0.01 32.6
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Document Number 85773 Rev. 1.6, 04-Apr-06
MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C unless otherwise specified
Ptot - Total Power Dissipation (mW)
600
500
400
300
200
100
0 0
95 9602
40 80 120 160 200 Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
TKVZ - Temperature Coefficient of VZ (10-4/K)
15
10
5
I = 5 mA
Z
0
-5 0
95 9600
10 20 30 40 VZ - Z-Voltage (V)
50
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
VZ - Voltage Change (mV)
1000
Tj = 25 °C 100
IZ = 5 mA 10
1 0 5 10 15 20 25
95 9598
VZ - Z-Voltage (V)
Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C
VZtn - Relative Voltage Change
1.3 VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K
1.1
4 x 10-4/K 2 x 10-4/K
1.0 0
- 2 x 10-4/K
0.9 - 4 x 10-4/K
0.8 - 60 0
60 120 180 240
95 9599
Tj - Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs. Junction Temperature
IF - Forward Current (mA)
CD - Diode Capacitance (pF)
200
150 VR = 2 V
100 Tj = 25 °C
50
0 0
95 9601
5 10 15 20 VZ - Z-Voltage (V)
25
Figure 5. Diode Capacitance vs. Z-Voltage
100
10
Tj = 25 °C 1
0.1
0.01
0.001 0
0.2 0.4 0.6 0.8 1.0
95 9605
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
Document Number 85773 Rev. 1.6, 04-Apr-06
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MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
IZ - Z-Current (mA)
IZ - Z-Current (mA)
100
80 Ptot = 500 mW
Tamb = 25 °C 60
40
20
0 0
95 9604
4 6 8 12 VZ - Z-Voltage (V)
20
Figure 7. Z-Current vs. Z-Voltage
rZ - Differential Z-Resistance (Ω)
1000
IZ = 1 mA 100
5 mA 10 10 mA
1 Tj = 25 °C 0 5 10 15 20 25
95 9606
VZ - Z-Voltage (V)
Figure 9. Differential Z-Resistance vs. Z-Voltage
50
40
Ptot = 500 mW Tamb = 25 °C
30
20
10
0 15
95 9607
20 25 30 VZ - Z-Voltage (V)
35
Figure 8. Z-Current vs. Z-Vo.