Power Amplifier. HT1818-30A Datasheet

HT1818-30A Amplifier. Datasheet pdf. Equivalent

Part HT1818-30A
Description GaN Hybrid Power Amplifier
Feature GaN Hybrid Power Amplifier HT1818-30A Product Features • GaN on SiC HEMT • In/Out Impedance Matchin.
Manufacture RFHIC
Datasheet
Download HT1818-30A Datasheet



HT1818-30A
GaN Hybrid Power Amplifier HT1818-30A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
• Custom design available
Applications
• RF Sub-Systems
• Base Station
• Repeater
• LTE system
Package Type : NP-1EL
Description
The HT1818-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
1805
-
1880
Power Gain
36 38 40
Gain Flatness
dB -
0.8
2
Input Return Loss
- -10 -8
Pout @ Average dBm - 37 -
Pout @ Psat
dBm 44
45
-
ACLR @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-
-32 -28
-52 -
Drain Efficiency
% 25
26
-
Ids
mA -
680 710
V-
-3.0 -2.0
Supply Voltage
V 27.5
28
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=37dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 110mA
Idq2 = 130mA
Pulse Width=50us, 10%Duty
Non DPD
With DPD
Pout @ Average
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
TYP
2
20.5 x 15 x 3.5
REMARK
-
-
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
1/8
All specifications may change without notice
Version 1.0



HT1818-30A
GaN Hybrid Power Amplifier
Absolute Maximum Ratings
PARAMETER
UNIT
Gate-Source Voltage
V
Drain-Source Voltage
V
Gate Current
mA
Operating Junction Temperature
°C
Operating Case Temperature
°C
Storage Temperature
°C
*Maximum Input Level
dBm
* Test Condition : Pulse Width=50us, 10%Duty
HT1818-30A
RATING
-10 ~0
50
9.3
225
-30 ~ 85
-40 ~ 100
25
SYMBOL
Vgs1
Vgs2
Vds
Ig
TJ
TC
TSTG
Pin
Operating Voltages & Input Level
PARAMETER
UNIT
Drain Voltage
V
Gate Voltage (on-stage)
V
Gate Voltage (on-stage)
V
Gate Voltage (off-stage)
V
Gate Voltage (off-stage)
V
Idq1
mA
Idq2
mA
*RF Input Level
dBm
* Test Condition : Pulse Width=50us, 10%Duty
MIN
-
-
-
-
-
105
120
-
TYP
28
-3
-3
-8
-8
110
130
-
MAX
-
-2
-2
-
-
115
140
20
SYMBOL
Vds
Vgs 1
Vgs 2
Vgs 1
Vgs 2
Idq1
Idq2
Pin
Block Diagram
GaN on SiC
GaN on SiC
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
2/8
All specifications may change without notice
Version 1.0





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