GaN Hybrid Power Amplifier
GaN Hybrid Power Amplifier HT1818-30A
Product Features
• GaN on SiC HEMT • In/Out Impedance Matching • Surface Mount Hy...
Description
GaN Hybrid Power Amplifier HT1818-30A
Product Features
GaN on SiC HEMT In/Out Impedance Matching Surface Mount Hybrid Type Small Size & Mass High Efficiency Low Cost Custom design available
Applications
RF Sub-Systems Base Station Repeater LTE system
Package Type : NP-1EL
Description
The HT1818-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
1805
-
1880
Power Gain
36 38 40
Gain Flatness
dB -
0.8
2
Input Return Loss
- -10 -8
Pout @ Average dBm - 37 -
Pout @ Psat
dBm 44
45
-
ACLR @ BW 10MHz LTE (PAPR 7.5dB)
dBc
-
-32 -28 -52 -
Drain Efficiency
% 25
26
-
Ids
mA -
680 710
V-
-3.0 -2.0
Supply Voltage
V 27.5
28
-
Caution The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note 1. ACLR Measured Pout=37dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180) 2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION ZS = ZL = 50 ohm
Amp : Idq1 = 110mA Idq2 = 130mA
P...
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