Power Amplifier. HT1818-15M Datasheet

HT1818-15M Amplifier. Datasheet pdf. Equivalent

Part HT1818-15M
Description GaN Hybrid Power Amplifier
Feature Preliminary GaN Hybrid Power Amplifier HT1818-15M Product Features • E-pHEMT GaAs + GaN on SiC • 2-.
Manufacture RFHIC
Datasheet
Download HT1818-15M Datasheet



HT1818-15M
Preliminary
GaN Hybrid Power Amplifier HT1818-15M
Product Features
• E-pHEMT GaAs + GaN on SiC
• 2-Stage Amplifier 50ohms Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
Applications
• RF Sub-Systems
• Base Station
• Repeater
• 4G/LTE system
• Small cell
Package Type : NP-1EL
Description
The HT1818-15M is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 to 1880MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds1 =5V, Vds2 =28V, Ta=25
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
1805
-
1880
Power Gain
- 34 -
Gain Flatness
dB -
0.8 1.5
Input Return Loss
- -9 -6
Pout @ Average dBm - 33 -
Pout @ Psat
dBm 40.5
41.5
-
ACLR @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-
-39 -30
-54 -
Drain Efficiency
%
-
27
-
Ids1 - 140 -
mA
Ids2 - 240 -
-5-
Supply Voltage V -
-3.0 -2.0
- 28 -
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn on the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp1 : Idq1 = 140mA
Amp2 : Idq2 = 105mA
Pulse Width=20us, Duty10%
Non DPD
With DPD
Pout @ Average
Drive Amp. (Vds1)
Gate Bias (Vgs2)
Main Bias (Vds2)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facilities : 919-677-8780 / sales@rfhicusa.com
TYP
2
20.5 x 15 x 3.5
1/8
REMARK
-
-
All specifications may change without notice
Version 0.1



HT1818-15M
Preliminary
GaN Hybrid Power Amplifier
Absolute Maximum Ratings
PARAMETER
Gate-Source Voltage
UNIT
V
Drain-Source Voltage
V
Gate Current
Operating Junction Temperature
Operating Case Temperature
Storage Temperature
Maximum Input Level
mA
°C
°C
°C
dBm
HT1818-15M
RATING
-10 ~ 0
7
50
4.0
225
-30 ~ 95
-40 ~ 100
20
Operating Voltages
PARAMETER
Drain Voltage
Gate Voltage (on-stage)
Gate Voltage (off-stage)
UNIT
V
V
V
MIN
4.75
27.5
-
-
TYP
5
28
Vgs2@Idq2
-8
SYMBOL
Vgs2
Vds1
Vds2
Igs2
TJ
TC
TSTG
Pin
MAX
5.25
-
-2
-
SYMBOL
Vds1
Vds2
Vgs 2
Vgs 2
Block Diagram
E-pHEMT GaAs
GaN on SiC
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facilities : 919-677-8780 / sales@rfhicusa.com
2/8
All specifications may change without notice
Version 0.1





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