Power Amplifier. HT1818-15A Datasheet

HT1818-15A Amplifier. Datasheet pdf. Equivalent

Part HT1818-15A
Description GaN Hybrid Power Amplifier
Feature GaN Hybrid Power Amplifier HT1818-15A Product Features • GaN on SiC HEMT • 2-Stage Amplifier 50ohms.
Manufacture RFHIC
Datasheet
Download HT1818-15A Datasheet



HT1818-15A
GaN Hybrid Power Amplifier HT1818-15A
Product Features
• GaN on SiC HEMT
• 2-Stage Amplifier 50ohms Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
Applications
• RF Sub-Systems
• Base Station
• Repeater
• 4G/LTE system
• Small cell
Package Type : NP-1EL
Description
The HT1818-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
1805
-
1880
Power Gain
30 33 35
Gain Flatness
dB -
0.7
-
Input Return Loss
- -9.0 -5.0
Pout @ Average dBm - 33 -
Pout @ Psat
dBm 40.8
42
-
ACLR* @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-
-39 -30
-54 -
Drain Efficiency % 22
25
-
Ids mA - 290 -
V
Supply Voltage
V-
-3.0
28
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
-2.0
-
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 50mA
Idq2 = 105mA
Pulse Width=20us, Duty10%
Non DPD
With DPD
Pout @ Average
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
TYP
2
20.5 x 15 x 3.5
REMARK
-
-
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
1/8
All specifications may change without notice
Version 1.0



HT1818-15A
GaN Hybrid Power Amplifier HT1818-15A
Absolute Maximum Ratings
PARAMETER
UNIT
Gate-Source Voltage
V
Drain-Source Voltage
Gate Current
Operating Junction Temperature
Operating Case Temperature
Storage Temperature
Maximum RF Input Level
V
mA
°C
°C
°C
dBm
Operating Voltage & Input Level
PARAMETER
Drain Voltage
Gate Voltage (on-stage)
Gate Voltage (on-stage)
Gate Voltage (off-stage)
Gate Voltage (off-stage)
Idq1
Idq2
RF Input Level
UNIT
V
V
V
V
V
mA
mA
dBm
MIN
27.5
-
-
-
-
48.5
100
-
RATING
-10 ~ 0
50
5.7
225
-30 ~ 85
-40 ~ 100
25
TYP
28
-3
-3
-8
-8
50
105
-
SYMBOL
Vgs1
Vgs2
Vds
Ig
TJ
TC
TSTG
Pin
MAX
28.5
-2
-2
-
-
52.5
110
20
SYMBOL
Vds
Vgs 1
Vgs 2
Vgs 1
Vgs 2
Idq1
Idq2
Pin
Block Diagram
GaN on SiC
GaN on SiC
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
2/8
All specifications may change without notice
Version 1.0





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