Transistor. RT1P141S Datasheet

RT1P141S Transistor. Datasheet pdf. Equivalent

Part RT1P141S
Description Transistor
Feature www.DataSheet4U.com RT1P141X SERIES 〈Transistor〉 Transistor With Resistor For Switching Applicatio.
Manufacture Isahaya Electronics Corporation
Datasheet
Download RT1P141S Datasheet



RT1P141S
www.DataSheet4U.com
RT1P141X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION
RT1P141X is a one chip transistor
with built-in bias resistor,NPN type is RT1N141X.
FEATURE
・Built-in bias resistor (R1=10kΩ,R2=10kΩ).
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
OUTLINE DRAWING
UNIT:mm
RT1P141U
RT1P141C
1.6
0.4 0.8 0.4
2.5
0.5 1.5 0.5
②③
②③
Equivalent circuit
R1
B
(IN)
R2
C
(OUT)
E
(GND)
RT1P141S
4.0
0.1
0.45
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1P141M
2.1
0.425 1.25 0.425
②③
JEITA:SC-59
JEDEC:Similar to TO-236
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1P141T
0.2 0.8 0.2
②③
1.27 1.27
①②③
JEITA:-
JEDEC:-
①:Emitter
②:Collector
③:Base
JEITA:SC-70
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
ISAHAYA ELECTRONICS CORPORATION
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector



RT1P141S
www.DataSheet4U.com
RT1P141X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
CBO
EBO
CEO
CM
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P141T RT1P141U
125(※)
125
+125
-55~+125
RATING
RT1P141M
-50
-10
-50
-100
-200
RT1P141C
150
+150
-55~+150
RT1P141S
450
UNIT
V
V
V
mA
mA
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃)
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
SYMBOL
PARAMETER
(BR)CEO
CBO
FE
CE(sat)
I(ON)
I(OFF)
/R
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TYPICAL CHARACTERISTICS
TEST CONDITION
I C=-100μA,RBE=∞
VCB=-50V,I E =0
VCE=-5V,I C =-10mA
I C =-10mA,I B =-0.5mA
VCE=-0.2V,I C =-5mA
VCE=-5V,I C =-100μA
VCE=-6V,I E =10mA
MIN
LIMIT
TYP MAX
UNIT
-50 V
-0.1 μA
50 -
-0.1 -0.3
V
-1.5 -3.0
V
-0.8 -1.1
V
7.0 10 13 kΩ
0.9 1.0 1.1
150 MHz
Input On Voltage - Collector Current
-10
DC Forward Gain - Collector Current
1000
100
-1
10
-0.1
-1
-10
Collector Current  I C ( mA )
Collector Current - Input Off Voltage
-100
-1000
1
-1 -10 -100
Collector Current  I C ( mA )
-100
-10
-0 -0.4 -0.8 -1.2 -1.6 -2
Input Off Voltage  V I ( O F F ) ( V )
ISAHAYA ELECTRONICS CORPORATION





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)