M29W400DB

M29W400DT M29W400DB 4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read „ Access time: 45, 55, 70 ns „ Programming time – 10 μs per byte/word typical „ 11 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 8 main blocks „ Program/Erase controller – Embedded byte/word program algorithms „ Erase Suspend and Resume modes – Read and Program another block during Erase Suspend „ Unlock bypass program command – Faster production/batch programming „ Temporary block unprotection mode „ Low power consumption – Standby and Automatic Standby „ 100,000 Program/Erase cycles per block „ Electronic signature – Manufacturer code: 0020h – Top device code M29W400DT: 00EEh – Bottom device code M29W400DB: 00EFh – RoHS packages „ Automotive Device Grade 3 – Temperature: –40 to 125 °C – Automotive grade certified SO44 (M)(1) TSOP48 (N) 12 x 20 mm FBGA TFBGA48 (ZA)(1) 6 x 9 mm FBGA TFBGA48 (ZE) 6 x 8 mm 1. These packages are no more in mass production. April 2009 Rev 8 1/48 www.numonyx.com 1 Contents Contents M29W400DT, M29W400DB 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.1 Address inputs (A0-A17) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.2 Data inputs/outputs (D...