N-Channel MOSFET. MDF18N50B Datasheet

MDF18N50B MOSFET. Datasheet pdf. Equivalent

Part MDF18N50B
Description N-Channel MOSFET
Feature MDP1850B / MDF18N50B N-channel MOSFET 500V MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.2.
Manufacture MagnaChip
Datasheet
Download MDF18N50B Datasheet



MDF18N50B
MDP18N50B / MDF18N50B
N-Channel MOSFET 500V, 18.0 A, 0.27Ω
General Description
The MDP/F18N50B uses advanced Magnachips
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDP/F18N50B is suitable device for SMPS, HID
and general purpose applications.
Features
VDS = 500V
ID = 18.0A
RDS(ON) ≤ 0.27
@VGS = 10V
@VGS = 10V
Applications
Power Supply
PFC
Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP18N50B MDF18N50B
500
±30
18 18*
11 11*
72 72*
236 37
1.89 0.29
23.6
4.5
950
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec 2011. Version 1.0
Symbol
RθJA
RθJC
MDP18N50B
62.5
0.53
MDF18N50B
62.5
3.4
Unit
oC/W
1 MagnaChip Semiconductor Ltd.



MDF18N50B
Ordering Information
Part Number
MDP18N50BTH
MDF18N50BTH
Temp. Range
-55~150oC
-55~150oC
Package
TO-220
TO-220F
Packing
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta = 25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
IS
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 9A
VDS = 40V, ID = 9A
VDS = 400V,ID = 18.0A,VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 18.0A,
RG = 25Ω(3)
IS = 18.0A, VGS = 0V
IF = 18.0A, dl/dt = 100A/µs(3)
Min
500
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤18.0A, di/dt≤200A/us, VDDBVDSS, Rg =25Ω, Starting TJ=25°C
4. L=5.3mH, IAS=18.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Typ
-
-
-
-
0.22
13
48
10
15
2490
13
307
32
82
222
75
18
-
375
4.2
Max
-
4.0
1
100
0.27
-
-
-
-
-
-
-
-
-
-
-
-
1.4
-
-
Unit
V
µA
nA
S
nC
pF
ns
A
V
ns
µC
Dec 2011. Version 1.0
2 MagnaChip Semiconductor Ltd.





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