ALLOY-DIFFUSED TRANSISTOR. AF178 Datasheet

AF178 TRANSISTOR. Datasheet pdf. Equivalent

Part AF178
Description GERMANIUM ALLOY-DIFFUSED TRANSISTOR
Feature PHILIPS TENTATIVE DATA R.F. GERMANIUM ALLOY-DIFFUSED TRANSISTOR Germanium alloy-diffused transist.
Manufacture Philips
Datasheet
Download AF178 Datasheet



AF178
PHILIPS
TENTATIVE DATA
R.F. GERMANIUM
ALLOY-DIFFUSED TRANSISTOR
Germanium alloy-diffused transistor of the p-n-p type in a metal
case with low noise and high gain up to 260 Mc/s, for use in V . H . F .
applications as amplifier-, oscillator- and converter circuits.
r L I M I T I N G V A L U E S (Absolute max. values)
Collector
Voltage (base reference)
= max.
25 V
Current
= max.
10 mA
Emitter
Reverse current
= max.
1 mA
Base
Current
-Ig = max.
1 mA
Dissipation
Total dissipation
Ptot = max.
110 mW
Temperatures
Storage temperature
Junction temperature
continuous
incidentally (total dura-
tion max. 200 hrs)
THERMAL DATA
1s = -55 °C to+75 °C
iT = max.
T, = max.
= max.
'96 °C
'?9Q° °C
200 hrs)
Thermal resistance from junction
to ambience in free air
K = max. 0.4°C/mW
Shield load-
JANUARY 1964
PHILIPS ELECTRON TUBE DIVISION



AF178
Dimensions in mm
TO-12 case
OD
C H A R A C T E R I S T I C S at Tamb = 25 °C
Collector current at Ig = 0
= 12 v
= 25 v
Emitter voltage at 1 = 0
-IE = 50
=
-vEB
o
>y
10
50 juA
> o.s v
Base current
-VCB = 12 V; -Ic - 1 mA
Base voltage
-VCB = 12 V; -Ic = 1 mA
-IB 50
-vBE > 220 mV
-VBE < 360 mv
CHARACTERISTICS RANGE VALUES FOR EQUIP-
MENT DESIGN
- 25
Frequency at which = 1
-VCB = 12 V; IE = 1 mA
= 180 Mc/s
Base impedance
-vCB = 12 V; IE =
f = 2 Mc/s
zrb = 10
Feedback capacitance
= 12 V; -IC - 1 mA
f = 0.45 Mc/s
-cre = 0.8 pF
1) Shield lead





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