N-Channel MOSFET. FQA7N80C_F109 Datasheet

FQA7N80C_F109 MOSFET. Datasheet pdf. Equivalent

Part FQA7N80C_F109
Description N-Channel MOSFET
Feature FQA7N80C_F109 — N-Channel QFET® MOSFET FQA7N80C_F109 N-Channel QFET® MOSFET 800 V, 7 A, 1.9 Ω Featu.
Manufacture Fairchild Semiconductor
Datasheet
Download FQA7N80C_F109 Datasheet



FQA7N80C_F109
FQA7N80C_F109
N-Channel QFET® MOSFET
800 V, 7 A, 1.9 Ω
Features
• 7.0 A, 800 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 3.5 A
• Low Gate Charge (Typ. 27nC)
• Low Crss (Typ. 10pF)
• 100% Avalanche Tested
• RoHS Compliant
May 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
G
DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA7N80C_F109
800
7.0
4.4
28.0
± 30
580
7.0
30
4.0
198
1.75
-55 to +150
300
FQA7N80C_F109
0.63
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA7N80C_F109 Rev C2
1
www.fairchildsemi.com



FQA7N80C_F109
Package Marking and Ordering Information
Part Number
FQA7N80C_F109
Top Mark
FQA7N80C
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.5 A
VDS = 50 V, ID = 3.5 A
3.0
--
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400 V, ID = 6.6A,
RG = 25
--
--
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4)
--
--
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 640 V, ID = 6.6A,
VGS = 10 V
(Note 4)
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS =7.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 6.6 A,
dIF / dt = 100 A/µs
--
--
--
--
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 22.2 mH, IAS = 7 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD 8.4 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ. Max. Unit
-- -- V
0.93 -- V/°C
-- 10 µA
-- 100 µA
-- 100 nA
-- -100 nA
--
1.57
5.6
5.0
1.9
--
V
S
1290
120
10
1680
155
13
pF
pF
pF
35 80 ns
100 210
ns
50 110 ns
60 130 ns
27 35 nC
8.2 -- nC
11 -- nC
-- 7.0
-- 28.0
-- 1.4
650 --
7.0 --
A
A
V
ns
µC
©2007 Fairchild Semiconductor Corporation
FQA7N80C_F109 Rev C2
2
www.fairchildsemi.com





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