IRFB33N15DPbF

SMPS MOSFET PD- 95537 IRFB33N15DPbF IRFS33N15DPbF IRFSL33N15DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 150V RDS(on) max 0.056Ω ID 33A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB IRFB33N15D D2Pak TO-262 IRFS33N15D IRFSL33N15D Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 33 24 130 3.8 170 1.1 ± 30 4.4 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes  through ‡ are on page 11 www.irf.com 1 7/21/04 IRFB/IRFS/IRFSL33N15DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Curren...