FDZ372NZ

FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET March 2010 FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 4.7 A, 50 mΩ Features General Description „ Max rDS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A „ Max rDS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A „ Max rDS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A „ Max rDS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A „ Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2x2 BGA „ Ultra-thin package: less than 0.4 mm height when mounted to PCB „ HBM ESD protection level > 3200V (Note3) „ RoHS Compliant Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ372NZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Applications „ Battery management „ Load switch „ Battery protection Pin 1 S DS G Pin 1 BOTTOM WL-CSP 1.0X1.0 Thin TOP MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±8 4.7 12 1.7 0.5...