WL-CSP MOSFET. FDZ372NZ Datasheet

FDZ372NZ MOSFET. Datasheet pdf. Equivalent

Part FDZ372NZ
Description N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET
Feature FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET March 2010 FDZ372NZ N-Channel .
Manufacture Fairchild Semiconductor
Datasheet
Download FDZ372NZ Datasheet



FDZ372NZ
March 2010
FDZ372NZ
N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
20 V, 4.7 A, 50 m
Features
General Description
„ Max rDS(on) = 50 mat VGS = 4.5 V, ID = 2 A
„ Max rDS(on) = 60 mat VGS = 2.5 V, ID = 2 A
„ Max rDS(on) = 72 mat VGS = 1.8 V, ID = 1 A
„ Max rDS(on) = 93 mat VGS = 1.5 V, ID = 1 A
„ Occupies only 1.0 mm2 of PCB area. Less than 30% of the
area of 2x2 BGA
„ Ultra-thin package: less than 0.4 mm height when mounted
to PCB
„ HBM ESD protection level > 3200V (Note3)
„ RoHS Compliant
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ372NZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
„ Battery management
„ Load switch
„ Battery protection
Pin 1
S
DS
G
Pin 1
BOTTOM
WL-CSP 1.0X1.0 Thin
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
4.7
12
1.7
0.5
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
L
Device
FDZ372NZ
Package
WL-CSP 1.0x1.0 Thin
(Note 1a)
(Note 1b)
75
260
Reel Size
7 ’’
Tape Width
8 mm
°C/W
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
1
www.fairchildsemi.com



FDZ372NZ
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
20 V
18 mVC
1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
0.4 0.7
ID = 250 µA, referenced to 25 °C
-3
VGS = 4.5 V, ID = 2 A
VGS = 2.5 V, ID = 2 A
VGS = 1.8 V, ID = 1 A
VGS = 1.5 V, ID = 1 A
VGS = 4.5V, ID = 2 A, TJ = 125°C
VDS = 5 V, ID = 4.7 A
40
45
53
63
57
22
1V
mV/°C
50
60
72 m
93
81
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1 MHz
515 685
85 115
65 100
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 10 V, ID = 4.7 A
VGS = 4.5 V, RGEN = 6
VGS = 4.5 V, VDD = 10 V
ID = 4.7 A
6.2 12 ns
3.6 10 ns
26 42 ns
5.6 12 ns
7 9.8 nC
0.8 nC
1.6 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.4 A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 4.7 A, di/dt = 100 A/µs
0.7 1.2
V
11 20 ns
2.6 10 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 75 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
2
www.fairchildsemi.com





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