N-Channel MOSFET
FQB10N50CF — N-Channel QFET® FRFET® MOSFET
FQB10N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 10 A, 610 m
October 2013
...
Description
FQB10N50CF — N-Channel QFET® FRFET® MOSFET
FQB10N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 10 A, 610 m
October 2013
Features
10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A Low gate charge ( Typ. 45 nC) Low Crss ( Typ. 17.5 pF) 100% avalanche tested Fast recovery body diode
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D D
G S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
Continuous Continuous
(TC (TC
= =
25oC) 100oC)
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
FQB10N50CFTM_WS 500 ±30 10 6.35 40 825 10 14.3 2.0 143 1.14
-55 to +150
300
Thermal Characteristics
Symbol RJC
RJA
Parameter...
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