N-Channel MOSFET. FQB10N50CF Datasheet

FQB10N50CF MOSFET. Datasheet pdf. Equivalent

Part FQB10N50CF
Description N-Channel MOSFET
Feature FQB10N50CF — N-Channel QFET® FRFET® MOSFET FQB10N50CF N-Channel QFET® FRFET® MOSFET 500 V, 10 A, 6.
Manufacture Fairchild Semiconductor
Datasheet
Download FQB10N50CF Datasheet



FQB10N50CF
FQB10N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 10 A, 610 m
October 2013
Features
• 10 A, 500 V, RDS(on) = 610 m(Max.) @ VGS = 10 V, ID = 5 A
• Low gate charge ( Typ. 45 nC)
• Low Crss ( Typ. 17.5 pF)
• 100% avalanche tested
• Fast recovery body diode
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
D
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
Continuous
Continuous
(TC
(TC
=
=
25oC)
100oC)
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQB10N50CFTM_WS
500
±30
10
6.35
40
825
10
14.3
2.0
143
1.14
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max.
FQB10N50CFTM_WS
0.87
62.5
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FQB10N50CF Rev. C0
1
www.fairchildsemi.com



FQB10N50CF
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FQB10N50CF
Device
FQB10N50CFTM_WS
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to 25oC
VDS = 500V , VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 5A
VDS = 20V, ID = 5A
2.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 10A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 10A
RG = 25
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 10A
dIF/dt = 100A/s
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 16.5mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 10A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.51
105
1660
182
17.5
45
8
19
25
47
138
55
-
-
-
91
220
Quantity
800
Max. Unit
-
-
10
100
±100
V
V/oC
A
nA
4.0 V
0.61
-S
2210
240
26
60
-
-
pF
pF
pF
nC
nC
nC
60 ns
105 ns
285 ns
120 ns
10 A
40 A
1.4 V
- ns
- nC
©2010 Fairchild Semiconductor Corporation
FQB10N50CF Rev. C0
2
www.fairchildsemi.com





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