Schottky Barrier Diodes (SBD)
MA111
MA750, MA750A
Silicon epitaxial planer type (cathode common)
For switching power ...
Schottky Barrier Diodes (SBD)
MA111
MA750, MA750A
Silicon epitaxial planer type (cathode common)
For switching power supply
s Features
q Forward current (average) IF(AV) : 10A type q Sealed in TO-220F full-pack package, with high reliability q Cathode common dual type q Low forward voltage VF
16.7±0.3 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.2
Unit : mm
4.2±0.2 2.7±0.2
4.2±0.2
ø3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 -0.1
14.0±0.5 Solder Dip 4.0
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Repetitive peak reverse voltage
MA750 MA750A
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
* Sine half wave : 10ms/cycle
Symbol
VRRM
IF(AV) IFSM* Tj Tstg
Rating 40 45 10 120
– 40 to +125 – 40 to +125
Unit
V
A A ˚C ˚C
2.54±0.25
5.08±0.5
123
1 : Anode
2 : Cathode
(Common)
3 : Anode
TO-220F(a) (TO-220 Full-Pack Package)
s Internal Connection
123
s Electrical Characteristics (Ta= 25˚C)
Parameter
Symbol
Condition
min typ max Unit
MA750 Reverse current (DC)
MA750A
IR
VR= 40V VR= 45V
3 mA
3
Forward voltage (DC)
VF IF= 5A
0.55 V
Thermal resistance
Rth(j-c) Flat direct current between junction and case
3 ˚C/W
y Rated input/output frequency : 150MHz
s Marking
Part Number MA750
MA750A
Symbol MA750 MA750A
Schottky Barrier Diodes (SBD)
MA750, MA750A
Forward current IF (A)
IF – VF
102 100˚C
Ta=25˚C
125˚C
10
1
10–1
10–2 0
0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V)
1.2
IF(AV) – TC
16
14...