MA750A

Schottky Barrier Diodes (SBD) MA111 MA750, MA750A Silicon epitaxial planer type (cathode common) For switching power supply s Features q Forward current (average) IF(AV) : 10A type q Sealed in TO-220F full-pack package, with high reliability q Cathode common dual type q Low forward voltage VF 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit : mm 4.2±0.2 2.7±0.2 4.2±0.2 ø3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 -0.1 14.0±0.5 Solder Dip 4.0 s Absolute Maximum Ratings (Ta= 25˚C) Parameter Repetitive peak reverse voltage MA750 MA750A Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature * Sine half wave : 10ms/cycle Symbol VRRM IF(AV) IFSM* Tj Tstg Rating 40 45 10 120 – 40 to +125 – 40 to +125 Unit V A A ˚C ˚C 2.54±0.25 5.08±0.5 123 1 : Anode 2 : Cathode (Common) 3 : Anode TO-220F(a) (TO-220 Full-Pack Package) s Internal Connection 123 s Electrical Characteristics (Ta= 25˚C) Parameter Symbol Condition min typ max Unit MA750 Reverse current (DC) MA750A IR VR= 40V VR= 45V 3 mA 3 Forward voltage (DC) VF IF= 5A 0.55 V Thermal resistance Rth(j-c) Flat direct current between junction and case 3 ˚C/W y Rated input/output frequency : 150MHz s Marking Part Number MA750 MA750A Symbol MA750 MA750A Schottky Barrier Diodes (SBD) MA750, MA750A Forward current IF (A) IF – VF 102 100˚C Ta=25˚C 125˚C 10 1 10–1 10–2 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.2 IF(AV) – TC 16 14...