2SK2524-01MR. K2524-01MR Datasheet

K2524-01MR 2SK2524-01MR. Datasheet pdf. Equivalent

Part K2524-01MR
Description 2SK2524-01MR
Feature 2SK2524-01MR FAP-II Series > Features - High Speed Switching - Low On-Resistance - No Secondary Brea.
Manufacture Fuji Electric
Datasheet
Download K2524-01MR Datasheet



K2524-01MR
2SK2524-01MR
FAP-II Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
450V 1Ω 9A 40W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
450
Drain-Gate-Voltage(RGS=20K)
V DGR
450
Continous Drain Current
ID 9
Pulsed Drain Current
I D(puls)
36
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
P D 40
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=450V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=4,5A
VGS=10V
Forward Transconductance
g fs
ID=4,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=9A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=10
Avalanche Capability
I AV
L=100µH
Tch=25°C
Continous Reverse Drain Current
I DR
TC=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
450
2,5
3,0
9,0
Typ. Max.
3,0
10
0,87
6,6
1150
130
50
20
50
60
35
3,5
500
1,0
100
1,0
1700
200
75
30
75
90
55
1,1 1,65
550
3,9
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
3,125 °C/W



K2524-01MR
N-channel MOS-FET
450V 1Ω 9A 40W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2524-01MR
FAP-II Series
Drain-Source On-State Resistance
RDS(on) = f(Tch); ID=4,5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Typical Drain-Source On-State-Resistance
RDS(on)=f(ID); TC=25°C
Tch [°C]
Typical Forward Transconductance
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS [V]
Gate Threshold Voltage
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
Typical Capacitances
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg); ID=9A; Tc=25°C
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
8
↑↑
9
VDS [V]
Power Dissipation
PD=f(Tc)
10
Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
12
VSD [V]
Transient Thermal impedance
Zthch-c=f(t) parameter:D=t/T
Tch [°C]
VDS [V]
t [s]
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98





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