K2524-01MR

2SK2524-01MR FAP-II Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier N-channel MOS-FET 450V 1Ω 9A 40W > Outline Drawing > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage V DS 450 Drain-Gate-Voltage(RGS=20KΩ) V DGR 450 Continous Drain Current ID 9 Pulsed Drain Current I D(puls) 36 Gate-Source-Voltage V GS ±30 Max. Power Dissipation P D 40 Operating and Storage Temperature Range T ch 150 T stg -55 ~ +150 > Equivalent Circuit Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Drain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V Gate Threshhold Voltage V GS(th) ID=1mA VDS=VGS Zero Gate Voltage Drain Current I DSS VDS=450V Tch=25°C VGS=0V Tch=125°C Gate Source Leakage Current I GSS VGS=±30V VDS=0V Drain Source On-State Resistance R DS(on) ID=4,5A VGS=10V Forward Transconductance g fs ID=4,5A VDS=25V Input Capacitance C iss VDS=25V Output Capacitance C oss VGS=0V Reverse Transfer Capacitance C rss f=1MHz Turn-On-Time ton (ton=td(on)+tr) t d(on) VCC=300V t r ID=9A Turn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V t f RGS=10 Ω Avalanche Capabi...