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60N321

GT60N321

Description

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs) Low saturation voltage: VCE (sat) = 2.3 ...

Toshiba Semiconductor

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