D-S MOSFET. AO4415 Datasheet

AO4415 MOSFET. Datasheet pdf. Equivalent

Part AO4415
Description P-Channel 30-V (D-S) MOSFET
Feature Freescale P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Densit.
Manufacture Freescale
Datasheet
Download AO4415 Datasheet



AO4415
Freescale
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Extended VGS range (±25) for battery pack
applications
AO4415 / MC4415
PRODUCT SUMMARY
VDS (V)
rDS(on) m()
-30 30 @ VGS = -10V
52 @ VGS = -4.5V
ID (A)
9.5
7.5
18
27
36
45
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-30 V
±25
9.5
8.3 A
±50
Continuous Source Current (Diode Conduction)a
IS -2.1 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
3.1
2.6
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
t <= 5 sec
Maximum Junction-to-Ambienta
t <= 10 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Maximum
25
50
Units
oC/W
oC/W
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AO4415
Freescale
AO4415 / MC4415
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain CurrentA
Drain-Source On-ResistanceA
Forward TranconductanceA
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = -250 uA
VDS = VGS, ID = -250 uA
VDS = 0 V, VGS = ±25 V
VDS = -24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V, TJ = 55oC
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -9.5 A
VGS = -4.5 V, ID = -7.5 A
VGS = -10 V, ID = -9.5 A, TJ = 55oC
VDS = -15 V, ID = -9.5 A
IS = -2.1 A, VGS = 0 V
Qg
Qgs
VDS = -15 V, VGS = -10 V,
ID = -9.5 A
Qgd
td(on)
tr
td(off)
tf
VDD = -15 V, RL = 15 , ID = -1 A,
VGEN = -10 V, RG = 6
Min
Limits
Typ
Max
Unit
-30
-1 -1.6
-3
V
±100 nA
-1
-5
uA
-50
24
44
29
A
30
52 m
36
31 S
-0.7 -1.2 V
15 26
5.8 nC
12
15 26
12
62
21
108
nS
46 71
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
FEESCALE reser ves the right to make changes without further notice to any products herein. F freescale makes no warranty,representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescaleassume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided infreescale datasheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
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