MC4415

Freescale P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability Extended VGS range (±25) for battery pack applications AO4415 / MC4415 PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) -30 30 @ VGS = -10V 52 @ VGS = -4.5V ID (A) 9.5 7.5 18 27 36 45 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -30 V ±25 9.5 8.3 A ±50 Continuous Source Current (Diode Conduction)a IS -2.1 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 3.1 2.6 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Casea t <= 5 sec Maximum Junction-to-Ambienta t <= 10 sec Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol RθJC RθJA Maximum 25 50 Units oC/W oC/...