Si5475DDC

New Product P-Channel 12-V (D-S) MOSFET Si5475DDC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.032 at VGS = - 4.5 V - 12 0.040 at VGS = - 2.5 V 0.052 at VGS = - 1.8 V ID (A) - 6a - 6a - 6a Qg (Typ.) 20 nC 1206-8 ChipFET 1 D DD DD Marking Code D S G BR XXX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5475DDC-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free TrenchFET® Power MOSFET APPLICATIONS Load Switch for Portable Devices S G D P-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit - 12 ±8 - 6a - 6a - 6a, b, c - 5.6b, c - 20 - 4.8 - 1.9b, c 5.7 3 2.3b, c 1.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t≤5s Steady State RthJA RthJF 45 18 55 °C/W 22 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?...