D-S MOSFET. Si5475DDC Datasheet

Si5475DDC MOSFET. Datasheet pdf. Equivalent

Part Si5475DDC
Description P-Channel 12-V (D-S) MOSFET
Feature New Product P-Channel 12-V (D-S) MOSFET Si5475DDC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(o.
Manufacture Vishay
Datasheet
Download Si5475DDC Datasheet



Si5475DDC
New Product
P-Channel 12-V (D-S) MOSFET
Si5475DDC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.032 at VGS = - 4.5 V
- 12 0.040 at VGS = - 2.5 V
0.052 at VGS = - 1.8 V
ID (A)
- 6a
- 6a
- 6a
Qg (Typ.)
20 nC
1206-8 ChipFET
1
D
DD
DD
Marking Code
D
S
G
BR XXX
Lot Traceability
and Date Code
Part #
Code
Bottom View
Ordering Information: Si5475DDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch for Portable Devices
S
G
D
P-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
- 12
±8
- 6a
- 6a
- 6a, b, c
- 5.6b, c
- 20
- 4.8
- 1.9b, c
5.7
3
2.3b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t5s
Steady State
RthJA
RthJF
45
18
55 °C/W
22
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 95 °C/W.
Document Number: 68750
S-82487-Rev. B, 13-Oct-08
www.vishay.com
1



Si5475DDC
Si5475DDC
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 5.4 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 4.8 A
VGS = - 1.8 V, ID = - 2.0 A
Forward Transconductancea
gfs VDS = - 6 V, ID = - 5.4 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 6 V, VGS = - 8 V, ID = - 7.5 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 7.5 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = 1.1 Ω
ID - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = - 1.1 Ω
ID - 5.6 A, VGEN = - 8 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 5.6 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 12
- 0.4
- 20
Typ.
Max.
Unit
- 25
3
0.026
0.032
0.041
21
V
mV/°C
- 1.0
± 100
-1
-5
0.032
0.040
0.052
V
nA
µA
A
Ω
S
1600
400
320
32
20
2.5
5.5
4.1
20
40
45
20
10
12
45
15
50
30
30
60
70
30
15
20
70
25
- 0.8
42
50
20
22
-6
- 20
- 1.2
65
75
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68750
S-82487-Rev. B, 13-Oct-08





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