PowerTrench MOSFET. FDS8958A_F085 Datasheet

FDS8958A_F085 MOSFET. Datasheet pdf. Equivalent

Part FDS8958A_F085
Description Dual N & P-Channel PowerTrench MOSFET
Feature FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET February 2010 FDS8958A_F085 Dual N & P-Channe.
Manufacture Fairchild Semiconductor
Datasheet
Download FDS8958A_F085 Datasheet



FDS8958A_F085
February 2010
FDS8958A_F085
Dual N & P-Channel PowerTrench® MOSFET
tm
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1: N-Channel
7.0A, 30V
RDS(on) = 0.028@ VGS = 10V
RDS(on) = 0.040@ VGS = 4.5V
Q2: P-Channel
-5A, -30V
RDS(on) = 0.052@ VGS = -10V
RDS(on) = 0.080@ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
Qualified to AEC Q101
RoHS Compliant
DD1DD2DD2
DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
EAS
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1c)
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8958A
FDS8958A_F085
13”
©2010 Fairchild Semiconductor Corporation
FDS8958A_F085 Rev. A
1
5 Q2
6
Q1
7
8
4
3
2
1
Q1 Q2
30 30
±20 ±20
7 -5
20 -20
22
1.6 1.6
0.9 0.9
54 13
-55 to +150
Units
V
V
A
W
mJ
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com



FDS8958A_F085
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
IGSSF
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
VDS = -24 V,
VGS = 0 V
VGS = 20 V,
VDS = 0 V
VGS = -20 V,
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS,
VDS = VGS,
ID = 250 µA
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V,
ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V,
ID = 6 A
VGS = -10 V,
ID = -5 A
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V,
ID = -4 A
VGS = 10 V,
VDS = 5 V
VGS = -10 V,
VDS = -5 V
VDS = 5 V,
ID = 7 A
VDS = -5 V,
ID =-5 A
Dynamic Characteristics
Ciss Input Capacitance
Q1
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Coss Output Capacitance
Q2
Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Type Min Typ Max Units
Q1 30
Q2 -30
V
Q1 25 mV/°C
Q2 -23
Q1 1 µA
Q2 -1
All 100 nA
All -100 nA
Q1 1 1.9 3
Q2 -1 -1.7 -3
V
Q1 -4.5 mV/°C
Q2 4.5
Q1 19 28 m
27 42
24 40
Q2 42 52
57 78
65 80
Q1 20
Q2 -20
Q1 25
Q2 10
A
S
Q1 575
Q2 528
Q1 145
Q2 132
Q1 65
Q2 70
Q1 2.1
Q2 6.0
pF
pF
pF
FDS8958A_F085 Rev. A
2
www.fairchildsemi.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)