Mode MOSFET. APM4301K Datasheet

APM4301K MOSFET. Datasheet pdf. Equivalent

Part APM4301K
Description P-Channel Enhancement Mode MOSFET
Feature APM4301K P-Channel Enhancement Mode MOSFET Features • -30V/-15A, R= DS(ON) 5.5mΩ (typ.) @ V .
Manufacture Anpec Electronics Coropration
Datasheet
Download APM4301K Datasheet



APM4301K
APM4301K
P-Channel Enhancement Mode MOSFET
Features
-30V/-15A,
R=
DS(ON)
5.5m
(typ.)
@
V =-20V
GS
R=
DS(ON)
6m
(typ.)
@
V =-10V
GS
R=
DS(ON)
10m
(typ.)
@
V =-4.5V
GS
Super High Dense Cell Design
Reliable and Rugged
ESD Rating : 3KV HBM
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
D
D
D
D
S
S
S
G
Top View of SOP8
( 1, 2, 3 )
S SS
(4)
G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
D D DD
(5,6,7,8)
P-Channel MOSFET
APM4301
APM4301 K :
Assembly Material
Handling Code
Temperature Range
Package Code
APM4301
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Jan., 2009
1
www.anpec.com.tw



APM4301K
APM4301K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note : *Surface Mounted on 1in2 pad area, t 10sec.
VGS=-10V
TA=25°C
TA=100°C
Rating
-30
±25
-15
-50
-3
150
-55 to 150
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
APM4301K
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
-30 -
-
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
TJ=85°C
-
-
- -1
- -30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
-1 -1.8 -2.5
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
- - ±10
VGS=-20V, IDS=-15A
RDS(ON) a Drain-Source On-state Resistance VGS=-10V, IDS=-13A
- 5.5 6.5
- 6 7.5
VSDa Diode Forward Voltage
Gate Charge Characteristics b
VGS=-4.5V, IDS=-10A
ISD=-3A, VGS=0V
- 10 13
- -0.7 -1.1
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-15V, VGS=-10V,
IDS=-15A
- 90 126
- 15 -
- 17.5 -
Unit
V
µA
V
µA
m
V
nC
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Jan., 2009
2
www.anpec.com.tw





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)