IR21094S

Data Sheet No. PD60163-U IR2109(4) (S) & (PbF) Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Logic and power ground +/- 5V offset. Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21094) Lower di/dt gate driver for better noise immunity Shut down input turns off both channels. Available in Lead-Free HALF-BRIDGE DRIVER Product Summary VOFFSET 600V max. IO+/- 120 mA / 250 mA VOUT 10 - 20V ton/off (typ.) 750 & 200 ns Dead Time 540 ns (programmable up to 5uS for IR21094) Packages Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high 8 Lead SOIC 14 Lead SOIC 14 Lead PDIP 8 Lead PDIP pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates...