N-channel MOSFET. TK11S10N1L Datasheet

TK11S10N1L MOSFET. Datasheet pdf. Equivalent

Part TK11S10N1L
Description Silicon N-channel MOSFET
Feature MOSFETs Silicon N-channel MOS (U-MOS-H) TK11S10N1L 1. Applications • Automotive • Motor Drivers • S.
Manufacture Toshiba
Datasheet
Download TK11S10N1L Datasheet



TK11S10N1L
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK11S10N1L
1. Applications
• Automotive
• Motor Drivers
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 23 m(typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
(3) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
TK11S10N1L
DPAK+
1: Gate
2: Drain (heatsink)
3: Source
Start of commercial production
2015-07
1 2015-06-08
Rev.1.0



TK11S10N1L
TK11S10N1L
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 100 V
Gate-source voltage
VGSS
±20
Drain current (DC)
Drain current (pulsed)
(Note 1)
(Note 1)
ID
IDP
11 A
33
Power dissipation
(Tc = 25)
(Note 2)
PD
65 W
Single-pulse avalanche energy
Single-pulse avalanche current
(Note 3)
EAS
IAS
33.8 mJ
11 A
Turn-off dVDS/dt ruggedness
dVDS/dt
8.4 V/ns
Channel temperature
Tch 175
Storage temperature
Tstg -55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol Max Unit
Channel-to-case thermal resistance
Rth(ch-c)
2.3 /W
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe
operating area is not only limited to thermal limits but also the current concentration phenomenon. This device
should not be used under conditions outside its safe operating area shown herein.
Note 3: VDD = 80 V, Tch = 25(initial), L = 215 µH, RG = 25 , IAS = 11 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2015-06-08
Rev.1.0





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