Document
CED6086/CEU6086
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 50A, RDS(ON) = 8.7mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
60
±20
50 200 50 0.33
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3 50
Units V V A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 3. 2011.July http://www.cet-mos.com
CED6086/CEU6086
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 24A
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 30V, ID = 20A, VGS = 10V, RGEN = 4.7Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 48V, ID = 20A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
IS VSD
VGS = 0V, IS = 40A
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
d.L = 0.1mH, IAS =42A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
Min 60
2
Typ Max Units
1 100 -100
V µA nA nA
4V 6.7 8.7 mΩ
2420 235 150
pF pF pF
13 26 ns 4 8 ns 45 90 ns 6 12 ns 50 65 nC 8 nC 16 nC
40 A 1.2 V
2
ID, Drain Current (A)
C, Capacitance (pF)
30 VGS=10,9,8,V
25 20
15
VGS=5V
10
5
0 0.0 1 2 3 4 5 6
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
CED6086/CEU6086
90 25 C
75
ID, Drain Current (A)
60 45
30
15
0 2
TJ=125 C
-55 C
345678
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3000 2500
Ciss
2000
1500
1000
500 Coss 0 Crss 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junc.