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CED6086 Dataheets PDF



Part Number CED6086
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED6086 DatasheetCED6086 Datasheet (PDF)

CED6086/CEU6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 8.7mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain .

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CED6086/CEU6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 8.7mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 60 ±20 50 200 50 0.33 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2011.July http://www.cet-mos.com CED6086/CEU6086 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 24A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 30V, ID = 20A, VGS = 10V, RGEN = 4.7Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 48V, ID = 20A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS = 0V, IS = 40A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 0.1mH, IAS =42A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C Min 60 2 Typ Max Units 1 100 -100 V µA nA nA 4V 6.7 8.7 mΩ 2420 235 150 pF pF pF 13 26 ns 4 8 ns 45 90 ns 6 12 ns 50 65 nC 8 nC 16 nC 40 A 1.2 V 2 ID, Drain Current (A) C, Capacitance (pF) 30 VGS=10,9,8,V 25 20 15 VGS=5V 10 5 0 0.0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics CED6086/CEU6086 90 25 C 75 ID, Drain Current (A) 60 45 30 15 0 2 TJ=125 C -55 C 345678 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 3000 2500 Ciss 2000 1500 1000 500 Coss 0 Crss 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junc.


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