CED6336/CEU6336
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 25A , RDS(ON) = 41mΩ @VG...
CED6336/CEU6336
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
60V, 25A , RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
60
±20
25 100 40 0.06
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3.2 50
Units V V A A W
W/ C C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2007.Jan http://www.cetsemi.com
CED6336/CEU6336
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
Symbol
Test Condition
Min Typ Max Units
BVDSS IDSS IGSSF IGSSR
VGS(th)
RDS(on)
VGS = 0V, I...