Document
CED03N8/CEU03N8
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
800V, 2.5A, RDS(ON) = 4.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
800
±30
2.5 10 75
0.5
Single Pulsed Avalanche Energy d
EAS 32
Single Pulsed Avalanche Current d
IAS 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2 50
Units V V A A W
W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2011.May http://www.cet-mos.com
CED03N8/CEU03N8
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 800V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
800
25 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 1.2A
2
4 3.8 4.8
V Ω
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss
VDS = 25V, VGS = 0V, f = 1.0 MHz
690 70
pF pF
Crss 15 pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 450V, ID = 2.2A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 720V, ID = 2.2A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
20 40 ns 34 68 ns 44 88 ns 28 56 ns 16 20 nC 3 nC 7 nC
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
IS VSD
VGS = 0V, IS = 2A
2A 1.2 V
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing.
d.L = 7mH, IAS =3A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
2
ID, Drain Current (A)
C, Capacitance (pF)
CED03N8/CEU03N8
2.4
2.0 VGS=10,9,8,6V
1.6
1.2
0.8 VGS=5V
0.4
0 0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
ID, Drain Current (A)
6
5
4
3
2
1 25 C
TJ=125C
0
02
4
-55 C 68
10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
900 750 Ciss
600
450
300
.