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CED03N8 Dataheets PDF



Part Number CED03N8
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED03N8 DatasheetCED03N8 Datasheet (PDF)

CED03N8/CEU03N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 2.5A, RDS(ON) = 4.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Co.

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CED03N8/CEU03N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 2.5A, RDS(ON) = 4.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 800 ±30 2.5 10 75 0.5 Single Pulsed Avalanche Energy d EAS 32 Single Pulsed Avalanche Current d IAS 3 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2 50 Units V V A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.May http://www.cet-mos.com CED03N8/CEU03N8 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 800V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 800 25 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 1.2A 2 4 3.8 4.8 V Ω Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss VDS = 25V, VGS = 0V, f = 1.0 MHz 690 70 pF pF Crss 15 pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 450V, ID = 2.2A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 720V, ID = 2.2A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings 20 40 ns 34 68 ns 44 88 ns 28 56 ns 16 20 nC 3 nC 7 nC Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b IS VSD VGS = 0V, IS = 2A 2A 1.2 V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L = 7mH, IAS =3A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 2 ID, Drain Current (A) C, Capacitance (pF) CED03N8/CEU03N8 2.4 2.0 VGS=10,9,8,6V 1.6 1.2 0.8 VGS=5V 0.4 0 0 2 4 6 8 10 12 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics ID, Drain Current (A) 6 5 4 3 2 1 25 C TJ=125C 0 02 4 -55 C 68 10 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 900 750 Ciss 600 450 300 .


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