CED03N8/CEU03N8
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
800V, 2.5A, RDS(ON) = 4.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
AB...
