N-Channel MOSFET. CED02N9 Datasheet

CED02N9 MOSFET. Datasheet pdf. Equivalent

Part CED02N9
Description N-Channel MOSFET
Feature CED02N9/CEU02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 900V, 2A,.
Manufacture CET
Datasheet
Download CED02N9 Datasheet



CED02N9
CED02N9/CEU02N9
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
900V, 2A, RDS(ON) = 6.8@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
900
±30
2
8
75
0.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.May
http://www.cet-mos.com



CED02N9
CED02N9/CEU02N9
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 900V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
900
25
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1A
2
4
5.3 6.8
V
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
690
70
pF
pF
Crss 15 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 450V, ID = 2.2A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 720V, ID = 2.2A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
20 40 ns
34 68 ns
44 88 ns
28 56 ns
16 20 nC
3 nC
7 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 2A
2A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
2





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