B1367

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation voltage: VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation: PC=30W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Product Specification 2SB1367 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO IC IB PC Tj Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE -100 -100 -5 -5 -0.5 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A VBE Base-emitter on voltage IC=-4A;VCE=-5V ICBO Collector cut-off current VCB=-100V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-5V hFE-2 DC current gain IC=-4A ; VCE=-5V fT Transition frequency IC=-1A ; VCE=-5V COB Collector output capacitance f=1MHz;VCB=-10V Product Specification 2SB1367 MIN TYP. MAX UNIT -100 V -2.0 V -1.5 V -0.1 mA -1.0 mA 40 ...