RB162MM-30

Schottky Barrier Diode RB162MM-30 lApplication General rectification lDimensions (Unit : mm) 1.6±0.1 0.1±00..015 Data Sheet lLand Size Figure (Unit : mm) 1.2 2.6±0.1 33..55±±00..1122 0.85 3.05 lFeatures 1) Small power mold type (PMDU) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type PMDU 0.9±0.1 0.8±0.1 lStructure Cathode ROHM : PMDU JEDEC : SOD-123FL : Manufacture Date lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φf11..5555±00.0.055 Anode 0.25±0.05 1.75±0.1 8.0±0.2 3.3.7711±0±.00.81 3.5±0.05 1.81±0.1 4.0±0.1 fφ11.0.0±0.01.1 1.5MAX lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage VRM Duty≦0.5 30 V Reverse Voltage VR Direct Reverse Voltage 30 V Average Forward Rectified Current Non-repetitive Forward Current Surge Peak Io IFSM Glass epoxi mounted, 60Hz half sin Wave resistive load, Tc=124°C max. 60Hz half sin wave, Non-repetitive at Ta=25°C,1cycle 1 30 A A Operating Junction Temperature Tj - 150 °C Storage Temperature Tstg - -55 to +150 °C lElectrical Characteristics (Tj = 25°C) Parameter Symbol Forward Voltage Reverse Current VF IR Conditions IF=1.0A VR=30V Min. Typ. Max. Unit - 0.44 0.52 V - 10 100 mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.09 - Rev.B RB162MM-30 lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF(A) 10 1 0.1 0.01 Tj = 150°C Tj = 125°C Tj = 75°C Tj = 25°C 0.001 0 Tj = ...