2SD1137. D1137 Datasheet

D1137 2SD1137. Datasheet pdf. Equivalent

Part D1137
Description 2SD1137
Feature 2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflectio.
Manufacture Hitachi Semiconductor
Datasheet
Download D1137 Datasheet



D1137
2SD1137
Silicon NPN Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Rating
100
100
4
4
5
1.8
40
150
–45 to +150
Unit
V
V
V
A
A
W
W
°C
°C



D1137
2SD1137
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
100
Emitter to base breakdown
voltage
V(BR)EBO
4
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
I CEO
I EBO
hFE 50
25
Collector to emitter saturation VCE (sat)
voltage
Note: 1. Pulse test.
Typ
Max Unit
—V
—V
100 µA
50 µA
250
350
1.0 V
Test conditions
IC = 10 mA, RBE =
IE = 1 mA, IC = 0
VCE = 80 V, RBE =
VEB = 3.5 V, IC = 0
VCE = 4 V
IC = 0.5 A*1
IC = 50 mA
IC = 1 A, IB = 0.1 A
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
10
(10 V, 4 A)
3
1.0
DC Operation
TC = 25°C
(40 V, 1 A)
0.3
0.1
(100 V, 50 mA)
0.03
0.01
1
3
10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2





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