POWER MOSFET. IRF8308MTRPbF Datasheet

IRF8308MTRPbF MOSFET. Datasheet pdf. Equivalent

Part IRF8308MTRPbF
Description POWER MOSFET
Feature IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical val.
Manufacture International Rectifier
Datasheet
Download IRF8308MTRPbF Datasheet



IRF8308MTRPbF
IRF8308MPbF
DirectFET™ Power MOSFET ‚
l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
l Ideal for CPU Core DC-DC Converters
28nC 8.2nC 3.5nC 34nC 20nC 1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT MP
Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-
state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries
used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher
frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-
induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Orderable part number
IRF8308MTRPbF
IRF8308MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
8
ID = 27A
6
12
10 ID= 21A
8
Max.
30
±20
27
21
150
212
12
21
VDS= 24V
VDS= 15V
Units
V
A
mJ
A
4
TJ = 125°C
6
4
2
TJ = 25°C
2
0
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2014 International Rectifier
0
0 20 40 60 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.
Submit Datasheet Feedback
February 24, 2014



IRF8308MTRPbF
IRF8308MPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
130
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
22
1.90
2.70
1.8
-6.1
–––
–––
–––
–––
–––
28
8.4
3.5
8.2
7.9
12
20
1.2
11
19
23
16
4404
885
424
Typ.
–––
–––
–––
20
34
Max. Units
Conditions
–––
–––
2.50
3.50
2.35
V VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1mA
imΩ VGS = 10V, ID = 27A
iVGS = 4.5V, ID = 21A
V VDS = VGS, ID = 100μA
––– mV/°C
1.0
150
100
-100
–––
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID =21A
42
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 21A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
Ãi2.2 Ω
––– VDD = 15V, VGS = 4.5V
––– ID = 21A
––– ns RG= 1.8Ω
–––
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Max. Units
Conditions
150 MOSFET symbol
A showing the
212 integral reverse
p-n junction diode.
i1.0 V TJ = 25°C, IS = 21A, VGS = 0V
i30 ns TJ = 25°C, IF =21A
51 nC di/dt = 300A/μs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400μs; duty cycle 2%.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 24, 2014





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