N-Channel MOSFET. FDB8160_F085 Datasheet

FDB8160_F085 MOSFET. Datasheet pdf. Equivalent

Part FDB8160_F085
Description N-Channel MOSFET
Feature FDB8160_F085 N-Channel PowerTrench® MOSFET FDB8160_F085 N-Channel PowerTrench® MOSFET 30V, 80A, 1.8.
Manufacture Fairchild Semiconductor
Datasheet
Download FDB8160_F085 Datasheet



FDB8160_F085
FDB8160_F085
N-Channel PowerTrench® MOSFET
30V, 80A, 1.8mΩ
October 2010
Features
„ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A
„ Typ Qg(10) = 187nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ 12V Automotive Load Control
„ Starter/Alternator Systems
„ Electronic Power Steering Systems
„ DC/DC converter
TO-263AB
FDB SERIES
©2010 Fairchild Semiconductor Corporation
FDB8160_F085 Rev. C
1
www.fairchildsemi.com



FDB8160_F085
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 160oC, VGS = 10V)
Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
RθJC
RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper
pad area
Ratings
30
±20
80
See Figure 4
1290
254
1.7
-55 to +175
0.59
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDB8160
FDB8160_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 24V, VGS = 0V
TJ = 150oC
VGS = ±20V
30
-
-
-
- -V
-
-
1
250
μA
- ±100 nA
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A, VGS= 10V
ID = 80A, VGS= 10V, TJ = 175°C
2
-
-
2.9 4
V
1.5 1.8 mΩ
2.6 3.1 mΩ
Ciss
Coss
Crss
Rg
Qg(TOT)
Qg(th)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 15V
ID = 80A
- 11825
-
pF
- 1810 -
pF
- 1240
-
pF
- 1.75 -
Ω
-
187 243
nC
- 20 26 nC
- 43 - nC
- 23 - nC
- 57 - nC
FDB8160_F085 Rev. C
2
www.fairchildsemi.com





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