SATURATED SWITCH. BSX39 Datasheet

BSX39 SWITCH. Datasheet pdf. Equivalent

Part BSX39
Description HIGH-SPEED SATURATED SWITCH
Feature BSX39 HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX39 is a silicon planar epitaxial NPN tran-sisto.
Manufacture SGS-THOMSON
Datasheet
Download BSX39 Datasheet



BSX39
BSX39
HIGH-SPEED SATURATED SWITCH
DESCRIPTION
The BSX39 is a silicon planar epitaxial NPN tran-sis-
tor in Jedec TO-18 metal case. It is designed for very
fast switching applications up to 500 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Pto t
Tstg, Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
Total Power Dissipation at T amb 25 °C
at T c as e 25 °C
at T c as e 100 °C
Storage and Junction Temperature
October 1988
V al ue
45
20
5
500
0.36
1.2
0.68
– 55 to 200
Unit
V
V
V
mA
W
W
W
°C
1/6



BSX39
BSX39
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max 146 °C/W
Max 486 °C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICE S
V(B R)CBO
V(BR)CE O *
V(B R)E BO
VCE( sat )*
VBE( sat )*
hFE*
fT
Collector Cutoff Current
(VBE = 0)
Collector-base Breakdown
Voltage (IE = 0)
Collector-emitter Breakdown
Voltage (IB = 0)
Emitter-base Breakdown
Voltage (Ic = 0)
Collectro-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
DC Current Gain
Transition Frequency
VCE = 20 V
VCE = 20 V
T amb = 125 °C
Ic = 10 µA
Ic = 10 mA
IE = 100 µA
Ic = 30 mA
Ic = 100 mA
Ic = 300 mA
Ic = 30 mA
T amb = 85 °C
IB = 3 mA
IB = 10 mA
IB = 30 mA
IB = 3 mA
Ic = 30 mA
Ic = 100 mA
Ic = 300 mA
IB = 3 mA
IB = 10 mA
IB = 30 mA
Ic = 30 mA
Ic = 100 mA
Ic = 300 mA
Ic = 30 mA
T amb = – 55 °C
VCE = 0.4 V
VCE = 0.5 V
VCE = 1 V
VCE = 0.4 V
I c = 30 mA
f = 100 MHz
VCE = 10 V
45
20
5
0.75
40
25
15
12
350
0.15
0.18
0.39
0.17
0.8
0.9
1.1
60
55
40
600
C EBO Emitter-base Capacitance
Ic = 0
f = 1 MHz
VEB = 0.5 V
7
C CBO
Collector-base Capacitance IE = 0
f = 1 MHz
VCB = 5 V
4
ts Storage Time
Ic = 10 mA
VCC = 10 V
I B1 = – IB2 = 10 mA
to n**
Turn-on Time
Ic = 300 mA
I B1 = 30 mA
VCC = 10 V
t o f f**
Turn-off Time
I c = 300 mA VCC = 10 V
I B1 – IB 2 = 30 mA
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
** See test circuit.
8
9
15
Max.
0.1
30
0.18
0.28
0.5
0.3
0.95
1.2
1.7
120
8
5
18
15
25
Unit
µA
µA
V
V
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
2/6





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