BSX39

BSX39 HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX39 is a silicon planar epitaxial NPN tran-sistor in Jedec TO-18 metal case. It is designed for very fast switching applications up to 500 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC Pto t Tstg, Tj Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature October 1988 V al ue 45 20 5 500 0.36 1.2 0.68 – 55 to 200 Unit V V V mA W W W °C 1/6 BSX39 THERMAL DATA Rth j-cas e Thermal Resistance Junction-case R th j-amb Thermal Resistance Junction-ambient Max 146 °C/W Max 486 °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. ICE S V(B R)CBO V(BR)CE O * V(B R)E BO VCE( sat )* VBE( sat )* hFE* fT Collector Cutoff Current (VBE = 0) Collector-base Breakdown Voltage (IE = 0) Collector-emitter Breakdown Voltage (IB = 0) Emitter-base Breakdown Voltage (Ic = 0) Collectro-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Transition Frequency VCE = 20 V VCE = 20 V T amb = 125 °C Ic = 10 µA Ic = 10 mA IE = 100 µA Ic = 30 mA Ic = 100 mA Ic = 300 mA Ic = 30 mA T amb = 85 °C IB = 3 mA IB = 10 mA IB = 30 mA IB = 3 mA Ic = 30 mA Ic = 100 mA Ic = 300 mA IB = 3 mA IB = 10 mA IB = 30 mA Ic = 30 mA Ic = 100 mA Ic ...