Power MOSFET. AUIRLI2505 Datasheet

AUIRLI2505 MOSFET. Datasheet pdf. Equivalent

Part AUIRLI2505
Description Power MOSFET
Feature AUTOMOTIVE GRADE PD - 97766 Features l Advanced Planar Technology l Logic-Level Gate Drive l Low O.
Manufacture International Rectifier
Datasheet
Download AUIRLI2505 Datasheet



AUIRLI2505
AUTOMOTIVE GRADE
PD - 97766
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rug-
gedized device design that HEXFET power
MOSFETs are well known for, provides the de-
signer with an extremely efficient and reliable de-
vice for use in Automotive and a wide variety of
other applications.
AUIRLI2505
HEXFET® Power MOSFET
V(BR)DSS
55V
RDS(on) max. 8.0m
ID 58A
S
D
G
TO-220AB Full-Pak
AUIRLI2505
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
chIDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dhSingle Pulse Avalanche Energy (Thermally Limited)
chAvalanche Current
eRepetitive Avalanche Energy
ehPeak Diode Recovery dv/dt
TJ Operating Junction and
58
41
360
63
0.42
± 16
500
54
6.3
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRJC
Junction-to-Case
RJA Junction-to-Ambient
y y300
10 lbf in (1.1N m)
Typ.
–––
–––
Max.
2.4
65
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/14/12



AUIRLI2505
AUIRLI2505
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250μA
hV(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA
f––– ––– 8.0
VGS = 10V, ID = 31A
fRDS(on)
Static Drain-to-Source On-Resistance ––– ––– 10 mVGS = 5.0V, ID = 31A
f––– ––– 13
VGS = 4.0V, ID = 26A
VGS(th)
gfs
IDSS
IGSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
1.0 ––– 2.0
59 ––– –––
hV VDS = VGS, ID = 250μA
S VDS = 25V, ID = 54A
––– ––– 25 μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– ––– 130
ID = 54A
Qgs Gate-to-Source Charge
––– ––– 25 nC VDS = 44V
fhQgd
Gate-to-Drain ("Miller") Charge
––– ––– 67
VGS = 5.0V, See Fig. 6&13
td(on) Turn-On Delay Time
––– 12 –––
VDD = 28V
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
––– 160 –––
––– 43 –––
––– 84 –––
––– 4.5 –––
ID = 54A
fhns RG = 1.3 VGS = 5.0V
RD = 0.50, See Fig. 10
Between lead,
D
nH 6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Ciss Input Capacitance
––– 5000 –––
VGS = 0V
Coss Output Capacitance
––– 1100 ––– pF VDS = 25V
hCrss
Reverse Transfer Capacitance
––– 390 –––
ƒ = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance
Diode Characteristics
––– 12 –––
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 58
MOSFET symbol
D
(Body Diode)
A showing the
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 360
––– ––– 1.3
integral reverse
G
fp-n junction diode.
S
V TJ = 25°C, IS = 31A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
fh––– 140 210 ns TJ = 25°C, IF = 54A
––– 650 970 nC di/dt = 100A/μs
ton Forward Turn-On Time
Intrins icturn-ontimeis negligible(turn-on is dominatedbyLS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25, IAS = 54A. (See Figure 12)
ƒ ISD 54A, di/dt 230A/µs, VDD V(BR)DSS,
TJ 175°C.
2
„ Pulse width 300µs; duty cycle 2%.
… t=60s, ƒ=60Hz
† Uses IRL2505 data and test conditions.
‡ Ris measured at Tj at approximately 90°C.
www.irf.com





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