MODE MOSFET. DMG9N65CTI Datasheet

DMG9N65CTI MOSFET. Datasheet pdf. Equivalent

Part DMG9N65CTI
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Feature Product Summary V(BR)DSS 650V RDS(ON) 1.3Ω @ VGS = 10V Package ITO-220AB ID TC = +25°C 9.0A Des.
Manufacture Diodes
Datasheet
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DMG9N65CTI
Product Summary
V(BR)DSS
650V
RDS(ON)
1.3Ω @ VGS = 10V
Package
ITO-220AB
ID
TC = +25°C
9.0A
Description
This new generation complementary dual MOSFET features low
on-resistance and fast switching, making it ideal for high-efficiency
power management applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
DMG9N65CTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low Input Capacitance
High BVDss Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: ITO-220AB
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: ITO-220AB 1.85 grams (Approximate)
ITO-220AB
D
G
Top View
Bottom View
S
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMG9N65CTI
ITO-220AB
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
ITO-220AB
9N65CTI
YYWW AB
9N65CTI = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 13 = 2013)
WW = Week (01 - 53)
DMG9N65CTI
Document number: DS36027 Rev. 4 - 2
1 of 5
www.diodes.com
February 2015
© Diodes Incorporated



DMG9N65CTI
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Notes 5 & 6)
Steady TC = +25°C
VGS = 10V
State
TC = +70°C
Pulsed Drain Current (Note 7) 10µs pulse, pulse duty cycle<=1%
Avalanche Current (Note 8) VDD = 100V, VGS = 10V, L = 60mH
Repetitive avalanche energy (Note 8) VDD = 100V, VGS = 10V, L = 60mH
Symbol
VDSS
VGSS
ID
IDM
IAR
EAR
DMG9N65CTI
Value
650
±30
9.0
7.0
30
2.7
260
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +70°C
TC = +25°C
Symbol
PD
RθJC
TJ, TSTG
Max
13
8
8.84
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
650
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
0.7
8.5
0.7
2310
122
2.2
2.2
39
8.5
11.9
39
29
122
28
570
4.17
Notes:
5. Device mounted on an infinite heatsink.
6. Drain current limited by maximum junction temperature.
7. Repetitive rating, pulse width limited by junction temperature.
8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
Max
-
1.0
±100
5
1.3
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 650V, VGS = 0V
nA VGS = ±30V, VDS = 0V
V VDS = VGS, ID = 250μA
Ω VGS = 10V, ID = 4.5A
S VDS = 40V, ID = 4.5A
V VGS = 0V, IS = 1A
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VGS = 10V, VDS = 520V,
ID = 8A
ns
ns VGS = 10V, VDS = 325V,
ns RG = 25Ω, ID = 8A
ns
ns dI/dt = 100A/µs, VDS = 100V,
µC IF = 8A
DMG9N65CTI
Document number: DS36027 Rev. 4 - 2
2 of 5
www.diodes.com
February 2015
© Diodes Incorporated





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