FQB25N33TM_F085

FQB25N33TM_F085 330V N-Channel MOSFET FQB25N33TM_F085 330V N-Channel MOSFET Features 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V Low gate charge (typical 58nC) Low Crss (typical 40pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101 RoHS Compliant April 2010 tm General Description These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) Drain Current - Pulsed Gate -Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalance Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25oC) * Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Am...