N-Channel MOSFET. FQB25N33TM_F085 Datasheet

FQB25N33TM_F085 MOSFET. Datasheet pdf. Equivalent

Part FQB25N33TM_F085
Description 330V N-Channel MOSFET
Feature FQB25N33TM_F085 330V N-Channel MOSFET FQB25N33TM_F085 330V N-Channel MOSFET Features • 25A, 330V, R.
Manufacture Fairchild Semiconductor
Datasheet
Download FQB25N33TM_F085 Datasheet



FQB25N33TM_F085
FQB25N33TM_F085
330V N-Channel MOSFET
Features
• 25A, 330V, RDS(on) = 0.23@VGS = 10V
• Low gate charge (typical 58nC)
• Low Crss (typical 40pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant
April 2010
tm
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Farichild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimized on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Drain-Source Voltage
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
Drain Current
- Pulsed
Gate -Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalance Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25oC) *
Power Dissipation (TC = 25oC)
- Derate above 25oC
TJ, TSTG Operating and Storage Temperature
TL
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQB25N33TM_F085 Rev. A
1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Ratings
330
25
16.0
100
±30
370
25
37
4.5
3.1
250
2.0
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
oC
Ratings
0.5
40
62.5
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com



FQB25N33TM_F085
Package Marking and Ordering Information
Device Marking
Device
Package Reel Size
FQB25N33
FQB25N33TM_F085
D2-PAK
330mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Tape Width
24mm
Quantity
800
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Forward
VDS = 330V,VGS = 0V
VDS = 264V,TC =125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
330
--
--
--
--
--
--
0.34
--
--
--
--
--
--
1
10
100
-100
V
V/oC
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Drain to Source On Resistance
Forward Transonductance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 12.5A,
VDS = 50V, ID = 12.5A, (Note 4)
3.0
--
--
-- 5.0
0.18 0.23
1 --
V
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
-- 1510 2010 pF
-- 290 385 pF
-- 40 60 pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate to Source Gate Charge
Qgd Gate to Drain Charge
VDD = 165V, ID = 25A
RGS = 25
(Note 4, 5)
VDS = 297V, ID = 25A,
VGS = 15V,
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0, IS = 25A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0, IS = 25A,
dIF/dt = 100A/µs
Notes:
1: Repetitive Rating : Pluse width Limited by maximum junction temperature
2:
3:
L=
ISD
1.79mH, IAS
25A, di/dt
=
22050AA,/VµsD,DV=D5D0V,BRVGDS=S2, 5Sta,rStintagrtTinJg=T2J5=oC25oC
4: Pulse Test : Pulse width 300µs, Duty cycle 2%
5: Essentially independent of operating temperature
(Note 4)
--
--
--
--
--
--
--
--
--
--
--
--
20
100
90
70
58
11.2
21
35
160
145
110
75
--
--
-- 25
-- 100
-- 1.5
275 --
3.6 --
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
FQB25N33TM_F085 Rev. A
2
www.fairchildsemi.com





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