Power MOSFET. IRL7833PbF Datasheet

IRL7833PbF MOSFET. Datasheet pdf. Equivalent

Part IRL7833PbF
Description Power MOSFET
Feature Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Freque.
Manufacture International Rectifier
Datasheet
Download IRL7833PbF Datasheet



IRL7833PbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Consumer Use
l Lead-Free
PD - 95270
IRL7833PbF
IRL7833SPbF
IRL7833LPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 3.8m
32nC
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL7833
D2Pak
IRL7833S
TO-262
IRL7833L
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
hCase-to-Sink, Flat, Greased Surface
hJunction-to-Ambient
Junction-to-Ambient (PCB Mount)
Notes  through † are on page 12
www.irf.com
Max.
30
± 20
150f
110f
600
140
72
0.96
-55 to + 175
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
05/18/04



IRL7833PbF
IRL7833/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C Reference to 25°C, ID = 1mA
fStatic Drain-to-Source On-Resistance ––– 3.1 3.8 mVGS = 10V, ID = 38A
––– 3.7 4.5
fVGS = 4.5V, ID = 30A
Gate Threshold Voltage
1.4 ––– 2.3 V VDS = VGS, ID = 250µA
Gate Threshold Voltage Coefficient
––– -11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
150 ––– –––
––– 32 47
S VDS = 15V, ID = 30A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 8.7 –––
VDS = 16V
––– 5.1 ––– nC VGS = 4.5V
––– 13 –––
ID = 30A
––– 5.3 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 18 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 22 ––– nC VDS = 16V, VGS = 0V
––– 18 –––
fVDD = 15V, VGS = 4.5V
––– 50 ––– ns ID = 26A
––– 21 –––
Clamped Inductive Load
tf Fall Time
––– 6.9 –––
Ciss Input Capacitance
––– 4170 –––
VGS = 0V
Coss Output Capacitance
––– 950 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 470 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dhEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
560
30
14
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
Min. Typ. Max. Units
Conditions
f––– ––– 150
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ùh(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 600
––– ––– 1.2
––– 42 63
––– 34 51
A showing the
integral reverse
G
S
p-n junction diode.
fV TJ = 25°C, IS = 30A, VGS = 0V
fns TJ = 25°C, IF = 30A, VDD = 15V
nC di/dt = 100A/µs
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