Power MOSFETs. IRF9530 Datasheet

IRF9530 MOSFETs. Datasheet pdf. Equivalent

Part IRF9530
Description P-Channel Power MOSFETs
Feature Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These ar.
Manufacture Fairchild Semiconductor
Datasheet
Download IRF9530 Datasheet



IRF9530
Data Sheet
IRF9530, RF1S9530SM
January 2002
12A, 100V, 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate power
field effect transistors. They are advanced power MOSFETs
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. The high input impedance allows these
types to be operated directly from integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9530
TO-220AB
IRF9530
RF1S9530SM
TO-263AB
RF1S9530
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9530SM9A.
Features
• 12A, 100V
• rDS(ON) = 0.300
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263A
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRF9530, RF1S9530SM Rev. B



IRF9530
IRF9530, RF1S9530SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
IRF9530,
RF1S9530SM
-100
-100
-12
-7.5
-48
±20
75
0.6
500
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
ID = -250µA, VGS = 0V, (Figure 10)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC= 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V,
(Figure 7)
VGS = ±20V
ID = -6.5A, VGS = -10V, (Figures 8, 9)
VDS > ID(ON) x rDS(ON) Max, ID = -6.5A
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain (“Miller”) Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
td(ON)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
LS
VDD = 50V, ID -12A, RG = 50Ω, VGS = 10V
RL = 4.2Ω, (Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
VGS = -10V, ID = -12A, VDSS= 0.8 x Rated BVDSS,
(Figure 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)
Measured From the
Contact Screw On Tab To
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Typical Socket Mount
MIN
-100
-2
-
-
-12
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.250
3.8
30
70
70
70
25
13
12
500
300
100
3.5
4.5
7.5
-
-
MAX
-
-4
-25
-250
-
±100
0.300
-
60
140
140
140
45
-
-
-
-
-
-
-
-
1.67
62.5
UNITS
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
nH
oC/W
oC/W
©2002 Fairchild Semiconductor Corporation
IRF9530, RF1S9530SM Rev. B





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