Document
SMD Type
Schottky Diodes SS1020F ~ SS10100F
Diodes
■ Features
● Fast switching speed ● Low power loss, high efficieucy
● Surface mount package ideally suited for autonatic insertion
SOD-123F
Unit:mm
Cathode Band Top View
0.8± 0.1
1.85 ± 0.1
0.20
1.20 ~ 1.35
2.8 ± 0.1 0.65 ± 0.1
3.7 ± 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol SS1020F SS1030F SS1040F SS1060F SS10100F Unit
Repetitive Peak Reverse Voltage Reverse Breakdown Voltage @ IR =500μA Reverse Voltage Forward Voltage Ta=65℃ Averaged Forward Current.Ta=75℃ Peak Forward Surge Current @ t=8.3ms Reverse Voltage Leakage Current Typical Junction Capacitance Junction Temperature Storage Temperature
VRRM VBR VR VF IFAV IFSM IR Cj Tj Tstg
20
30 40 60
0.55 60
1 30 500
125 -55 to 125
0.7 50
100 V
0.85 A μA
40 pF ℃
■ Marking
NO. Marking
SS1020F SS1030F SS1040F SS1060F SS10100F G2 G3 G4 G6 G10
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SMD Type
Diodes
Schottky Diodes
SS1020F ~ SS10100F
AVERAGE FORWARD RECITIFIED CURRENT AMPERES
■ Typical Characterisitics
1
0.75
0.5
SINGLE PHASE HALF WAVE 60Hz RESTSTIVE OR INDUCTIVE LOAD P.C.B MOUNTED
0.25 ON 0.2x0.2 (,, 5.0x5.0mm) COPPER PAD AREAS
0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE,OC
REVERSE CURRENT, A
104 103 102 10
1 0.1
0
TJ 125 OC TJ 75 OC
TJ 25 OC
20 40 REVERSE VOLTAGE,VR(V)
60
FIG. 1-FORWARD CURRENT DERATING CURVE
FIG. 2-TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT, AMPERES
1000 100
20 - 40V
60V
20
20-40V 10
60V
CAPACITANCE,(pF)
10 100V
TJ=25OC
0.1 0 10 20 30 VR,REVERSE VOLTAGE(VOLTS)
40
FIG.3 -TYPICAL JUNCTION CHATACTERISTIC
100V
1.0
TJ = 25 OC PulseWidth= 300ms 1%Duty Cycle
0.1 .5 .7 .8 .9 1.1 1.3 1.5 1.7 1.9
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG. 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
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