JHW10N60

Shanghai Jin-ec Electronic& Technology Co., Ltd JHW10N60 MAIN CHARACTERISTICS Package N N-CHANNEL MOSFET ID 9.5 A VDSS 600 V Rdson（@Vgs=10V） 0.75Ω Qg 34 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 20pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 20pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking Package Halogen Free Packaging Device Weight J+:10N60CT-O-C-N-B J+:10N60CTTO-220C NO     Tube 2.15 g(typ) J+:10N60FT-O-F-N-B J+:10N60FTTO-220MF NO     Tube 2.20 g(typ) 1/9 ABSOLUTE RATINGS (Tc=25℃) JHW10N60 Parameter Symbol Value Unit JHW10N60CT JHW10N60FT － Drain-Source Voltage VDSS 600 600 V Drain Current -continuous ID T=25℃ T=100℃ 9.5 6.0 9.5* A 6.0* A （ 1） Drain Current – pulse（note 1） IDM 40 40* A Gate-Source Voltage VGSS ±30 V （ 2） Single Pulsed Avalanche Energy（note 2） EAS 713 mJ （ 1） Avalanche Current（note 1） IAR 9.5 A （ 1） Repetitive Avalanche Current（note 1） EAR 17.8 mJ （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt 4.5 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ 178 1.43 50 W 0.4 W/℃ Operating and Storage Temperature Range TJ，TSTG -55～+150 ℃ Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 300 ℃ 2/9 ELECTRICAL CHARACTERISTICS...