N-CHANNEL MOSFET. JHW10N60 Datasheet

JHW10N60 MOSFET. Datasheet pdf. Equivalent

Part JHW10N60
Description N-CHANNEL MOSFET
Feature Shanghai Jin-ec Electronic& Technology Co., Ltd JHW10N60 MAIN CHARACTERISTICS Package N N-CHAN.
Manufacture Jin-ec Electronic
Datasheet
Download JHW10N60 Datasheet



JHW10N60
Shanghai Jin-ec Electronic& Technology Co., Ltd
JHW10N60
主要参数 MAIN CHARACTERISTICS
封装 Package
N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
ID 9.5 A
VDSS 600 V
Rdson(@Vgs=10V) 0.75
Qg 34 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
zCrss (典型值 20pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 20pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
封装
Package
无卤素
Halogen
Free
包装
Packaging
器件重量
Device
Weight
J+:10N60CT-O-C-N-B J+:10N60CTTO-220C NO     条管 Tube 2.15 g(typ)
J+:10N60FT-O-F-N-B J+:10N60FTTO-220MFNO     条管 Tube 2.20 g(typ)
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JHW10N60
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
JHW10N60
项目
Parameter
符号
Symbol
数值
Value
单位
Unit
JHW10N60CT JHW10N60FT
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
600 600 V
连续漏极电流
Drain Current -continuous
ID
T=25
T=100
9.5
6.0
9.5* A
6.0* A
最大脉冲漏极电流(注 1
Drain Current – pulsenote 1
IDM
40 40* A
最高栅源电压
Gate-Source Voltage
VGSS
±30 V
单脉冲雪崩能量(注 2
Single Pulsed Avalanche Energynote 2
EAS
713 mJ
雪崩电流(注 1
Avalanche Currentnote 1
IAR
9.5 A
重复雪崩能量(注 1
Repetitive Avalanche Currentnote 1
EAR
17.8 mJ
二极管反向恢复最大电压变化速率(注 3
Peak Diode Recovery dv/dtnote 3
dv/dt
4.5 V/ns
耗散功率
Power Dissipation
PD
TC=25
-Derate
above 25
178
1.43
50 W
0.4 W/
最高结温及存储温度
Operating and Storage Temperature Range TJTSTG
-55+150
引线最高焊接温度
Maximum Lead Temperature for Soldering
Purposes
TL
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
300
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