Epitaxial Diode. F60UP20DN Datasheet

F60UP20DN Diode. Datasheet pdf. Equivalent

Part F60UP20DN
Description Common Cathode Fast Recovery Epitaxial Diode
Feature F60UP20DN ® F60UP20DN Pb Pb Free Plating Product 60.0 Ampere,200 Volt Common Cathode Fast Recov.
Manufacture Thinki Semiconductor
Datasheet
Download F60UP20DN Datasheet



F60UP20DN
F60UP20DN
®
F60UP20DN
Pb
Pb Free Plating Product
60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-3PB/TO-3PN
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
Anode
GENERAL DESCRIPTION
F60UP20DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR Maximum D.C. Reverse Voltage
200 V
V RRM
Maximum Repetitive Reverse Voltage
200 V
I F(AV)
Average Forward Current
TC=100°C, Per Diode
TC=100°C, Per Package
30 A
60 A
I F(RMS)
I FSM
RMS Forward Current
Non-Repetitive Surge Forward Current
TC=100°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
53
300
A
A
PD Power Dissipation
156 W
TJ Junction Temperature
-40 to +150
°C
T STG
Torque
Storage Temperature Range
Module-to-Sink
RecommendedM3
-40 to +150
1.1
°C
N·m
R θJC
Thermal Resistance
Weight
ELECTRICAL CHARACTERISTICS
Junction-to-Case
0.8 °C /W
6.0 g
TC=25°C unless otherwise specified
Symbol
Parameter
IRM Reverse Leakage Current
Test Conditions
VR=200V
VR=200V, TJ=125°C
Min. Typ. Max.
-- -- 25
-- -- 250
Unit
µA
µA
VF Forward Voltage
I F =30A
IF=30A, TJ=125°C
-- 0.86 1.1
-- -- 0.95
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 22 --
ns
trr Reverse Recovery Time
VR=100V, IF=30A
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 26 --
-- 2.3 --
ns
A
trr Reverse Recovery Time
VR=100V, IF=30A
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 40 --
-- 4.1 --
ns
A
Rev.05
Page 1/3
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/



F60UP20DN
F60UP20DN
®
60
50
40
TJ =125°C
30
20
TJ =25°C
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VFV
Fig1. Forward Voltage Drop vs Forward Current
25
VR=100V
TJ =125°C
20
15
IF=60A
10 IF=30A
IF=15A
5
0
0 200 400 600 800 1000
diF/dtA/μs
Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
trr
0.6
IRRM
0.4
Qrr
0.2
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
100
80
60 IF=60A
VR=100V
TJ =125°C
40
IF=30A
20 IF=15A
0
0 200 400 600 800 1000
diF/dtA/μs
Fig2. Reverse Recovery Time vs diF/dt
250
VR=100V
TJ =125°C
200
150
100
50
IF=60A
IF=30A
IF=15A
0
0 200 400 600 800 1000
diF/dtA/μs
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/





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