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F60UP20DN

Thinki Semiconductor

Common Cathode Fast Recovery Epitaxial Diode

F60UP20DN ® F60UP20DN Pb Pb Free Plating Product 60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode ...


Thinki Semiconductor

F60UP20DN

File Download Download F60UP20DN Datasheet


Description
F60UP20DN ® F60UP20DN Pb Pb Free Plating Product 60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS TO-3PB/TO-3PN Cathode(Bottom Side Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Configuration Base Backside — Anode Cathode Anode GENERAL DESCRIPTION F60UP20DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 200 V V RRM Maximum Repetitive Reverse Voltage 200 V I F(AV) Average Forward Current TC=100°C, Per Diode TC=100°C, Per Package 30 A 60 A I F(RMS) I FSM RMS Forward Current Non-Repetitive Surge Forward Current TC=100°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine 53 300 A A PD Power Dissipation 156 W TJ Junction Temperature -40 to +150 °C T STG Torque Storage Temperature Range Module-to-Sink Recommended(M3) -40 to +150 1.1 °C N·m R θJC Thermal Resistance Weight ELECTRICAL CHARACTERISTICS Junction-to-Case 0.8 °C /W 6.0 g TC=25°C unless otherwise specified Symbol Parameter IRM Reverse Leakage Current Test Conditions VR=200V VR=...




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