SUD50N025-05P

New Product SUD50N025-05P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V ID (A)a, e 89 80 Qg (Typ) 30 nC TO-252 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion, Low-Side − Desktop PC − Notebook PC D GDS Top View Drain Connected to Tab Ordering Information: SUD50N025-05P—E3 (Lead (Pb)-Free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 70_C TA = 25_C TA = 70_C TC = 25_C TA = 25_C L = 0.1 mH TC = 25_C TC = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 25 "20 89a, e 80a, e 36b, c 30b, c 100 55 7.7b, c 45 101 83a 58a 11.5b, c 8.0b, c −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t p 10 sec Steady State RthJA RthJC Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 90 _C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 73362 S-50935—Rev. A, 08-May-05 Typ...