D-S MOSFET. SUD50N025-09BP Datasheet

SUD50N025-09BP MOSFET. Datasheet pdf. Equivalent

Part SUD50N025-09BP
Description N-Channel 25-V (D-S) MOSFET
Feature New Product SUD50N025-09BP Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) .
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Datasheet
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SUD50N025-09BP
New Product
SUD50N025-09BP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
25
rDS(on) (W)
0.0086 @ VGS = 10 V
0.012 @ VGS = 4.5 V
ID (A)a, e
62
52
Qg (Typ)
18.5 nC
TO-252
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
D RoHS Compliant
APPLICATIONS
D DC/DC Conversion, High-Side
– Desktop PC
D
RoHS
COMPLIANT
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N025-09BP—E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
TC = 25_C
TA = 25_C
L = 0.1 mH
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
25
"20
62e
51e
26b, c
22b, c
100
37
6.7b, c
28
39.2
55
39
10b, c
7b, c
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case
t p 10 sec
Steady State
RthJA
RthJC
Notes:
a. Based on TC = 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 50 _C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 73477
S–51449—Rev. A, 01-Aug-05
Typical
12
2.2
Maximum
15
2.7
Unit
_C/W
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SUD50N025-09BP
SUD50N025-09BP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
DVDS/TJ
DVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 26 A
VGS = 4.5 V, ID = 22 A
VDS = 15 V, ID = 26 A
25 V
20
– 6.3
mV/_C
1.2 2.4 V
"100
nA
1
mA
10
100 A
0.007
0.0096
46
0.0086
0.012
W
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Drain-Source Body Diode Characteristics
VDS = 12 V, VGS = 0 V, f = 1 MHz
VDS = 12 V, VGS = 10 V, ID = 26 A
VDS = 12 V, VGS = 4.5 V, ID= 26 A
f = 1 MHz
VDD = 12 V, RL = 0.54 W
ID ^ 22 A, VGEN = 10 V, Rg = 1 W
VDD = 12 V, RL = 0.54 W
ID ^ 22 A, VGEN = 4.5 V, Rg = 1 W
2020
485
245
38
18.5
7
6.5
0.9
9
8
20
8
17
15
17
8
57
28
1.4
14
12
30
12
26
23
26
12
pF
nC
W
ns
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
VSD
trr
Qrr
ta
tb
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TC = 25_C
IS = 6.7 A
IF = 6.7 A, di/dt = 100 A/ms, TJ = 25_C
37
A
100
0.9 1.5 V
26 40 ns
16 24 nC
12
ns
14
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73477
S–51449—Rev. A, 01-Aug-05





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