SMPS MOSFET. IRLR3714PbF Datasheet

IRLR3714PbF MOSFET. Datasheet pdf. Equivalent

Part IRLR3714PbF
Description SMPS MOSFET
Feature SMPS MOSFET PD - 95554A IRLR3714PbF IRLU3714PbF Applications l High Frequency Isolated DC-DC Conve.
Manufacture International Rectifier
Datasheet
Download IRLR3714PbF Datasheet



IRLR3714PbF
SMPS MOSFET
PD - 95554A
IRLR3714PbF
IRLU3714PbF
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
20m
ID
36A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR3714
I-Pak
IRLU3714
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)„
Max.
20
± 20
36 …
31
140
47
33
0.31
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Typ.
–––
–––
–––
Max.
3.2
50
110
Units
°C/W
Notes  through … are on page 10
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1
1/11/05



IRLR3714PbF
IRLR/U3714PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
20
–––
–––
–––
–––
0.022
15
21
––– V
––– V/°C
20 m
28
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A ƒ
VGS = 4.5V, ID = 14A ƒ
VGS(th)
IDSS
IGSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 16V, VGS = 0V
––– ––– 100
VDS = 16V, VGS = 0V, TJ = 125°C
–––
–––
200
nA
VGS = 16V
––– ––– -200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
17 ––– ––– S VDS = 10V, ID = 14A
Qg Total Gate Charge
Qgs Gate-to-Source Charge
––– 6.5 9.7
ID = 14A
––– 1.8 ––– nC VDS = 10V
Qgd
Qoss
Gate-to-Drain ("Miller") Charge
Output Gate Charge
––– 2.9 –––
––– 7.1 –––
VGS = 4.5V
VGS = 0V, VDS = 10V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 8.7 –––
VDD = 10V
––– 78 ––– ns ID = 14A
––– 10 –––
RG = 1.8
––– 4.5 –––
VGS = 4.5V ƒ
Ciss Input Capacitance
––– 670 –––
VGS = 0V
Coss Output Capacitance
––– 470 –––
VDS = 10V
Crss Reverse Transfer Capacitance ––– 68 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
72
14
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
––– 36…
––– 140
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V ƒ
––– 0.88 –––
TJ = 125°C, IS = 18A, VGS = 0V ƒ
––– 35 53
––– 34 51
ns TJ = 25°C, IF = 18A, VR=10V
nC di/dt = 100A/µs ƒ
––– 35 53
––– 35 53
ns TJ = 125°C, IF = 18A, VR=10V
nC di/dt = 100A/µs ƒ
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